Ulvac, Inc.

Junichi Hamaguchi

Shuji Kodaira

Koukichi Kamada

Yuta Sakamoto

Koji Suzuki

Shinya Nakamura

Naoki Morimoto

Yasushi Higuchi

Satoru Toyoda

Kazumasa Horita

Yoshihiro Ikeda

Kazuyoshi Hashimoto

Yoshiyuki Kadokura

Yukinobu Numata

Yohei Uchida

Akifumi Sano

Youhei Endo

Hiroaki Iwasawa

Joji Hiroishi

Tomoyuki Yoshihama

Shigeo Nakanishi

A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Method of manufacturing semiconductor device

A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.

Film formation apparatus

A manufacturing method of a device including: a first process in which a barrier film is formed on a substrate with a concave portion provided on one surface thereof so as to cover an inner wall surface of the concave portion; a second process in which a conductive film is formed so as to cover the barrier film; and a third process in which the conductive film is melted by a reflow method, wherein the method includes a process &#x3b1; between the second process and the third process, in which the substrate with the barrier film and the conductive film laminated thereon in this order is exposed to an atmosphere under a pressure A for a time period B, and wherein in the process &#x3b1;, control is carried out such that a product of the pressure A and the time period B is not greater than 6&#xd7;10[Pa&#xb7;s].

Manufacturing method and manufacturing apparatus of device

The sputtering apparatus has: a vacuum chamber in which a substrate is disposed; a cathode unit which is disposed inside the vacuum chamber so as to lie opposite to the substrate. The cathode unit has mounted a bottomed cylindrical target material from a bottom side thereof into at least one recessed portion formed in one surface of a holder, and has assembled therein a magnetic field generator for generating a magnetic field in an inside space of the target material. The sputtering apparatus further has: an anode shield to which a positive electric potential is applied; a gas introduction device for introducing a sputtering gas into the vacuum chamber; a power supply for activating power to the cathode unit; a vertical magnetic field generator including coils disposed along a wall surface of the vacuum chamber about a reference axis connecting the cathode unit and the substrate, and a power supply; and a controller for switching on or off the introduction of the sputtering gas from the gas introduction device.

Sputtering apparatus and sputtering method

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Susono, Japan

Junichi Hamaguchi