Sony Corporation

Junichi Furukawa

Kouichi Harada

Kazushi Wada

Takaaki Sarai

Hiroshi Tayanaka

Susumu Ooki

Fumiaki Okazaki

Masashi Nakata

Hideo Kanbe

Yoshinori Toumiya

Junichiro Fujimagari

Haruhiko Ajisawa

Naotsugu Yoshida

Yasuhiro Nakana

An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.

Solid-State imaging device and imaging apparatus having offset optical waveguides

Solid-state imaging device with pixels having first and second optical waveguides with shifted positions, and imaging apparatus including the solid-state imaging device

A solid-state imaging device includes a semiconductor substrate having a pixel region including a photoelectric conversion portion, a wiring portion including a conductor line and disposed on the semiconductor substrate with an insulating film therebetween, a metal pad connected to the conductor line, a pad-coating insulating film coating the metal pad, and a waveguide material layer. The wiring portion and the pad-coating insulating film each have an opening therein over the photoelectric conversion portion, and the openings continue from each other to define a waveguide opening having an open side and a closed side. The waveguide material layer is disposed in the waveguide opening and on the pad-coating insulating film with a passivation layer therebetween. The pad-coating insulating film has a thickness of 50 to 250 nm and a face defining the opening. The face is slanted so as to diverge toward the open side of the opening.

Solid-state imaging device, method for manufacturing the same and imaging apparatus

A solid-state imaging device includes: a semiconductor substrate on which multiple pixels are provided, each of the pixels having a photoelectric converting section; multiple insulating films stacked on the semiconductor substrate; a wiring film provided between the multiple insulating films; an intralayer lens provided for each photoelectric converting section between the multiple insulating films; an optical filter provided for each photoelectric converting section on the insulating film; and an on-chip lens provided for each photoelectric converting section on the optical filter, wherein at least one intralayer lenses and on-chip lens has a different structure for each pixel in accordance with the characteristic optical filter.

Solid state imaging device containing multi-layered inner lenses and imaging apparatus

A solid-state imaging device includes a two-dimensional array of photosensor sections on a semiconductor substrate, and a vertical transfer section including two-layer vertical transfer electrodes. The photosensor sections store signal charges generated by photoelectric conversion. The vertical transfer section reads signal charges from the photosensor sections and vertically transfers the read signal charges. The two-layer vertical transfer electrodes have first transfer electrode layers and second transfer electrode layers, and the first transfer electrode layers serve as read electrodes for reading the signal charges from the photosensor sections. The first transfer electrode layers have a larger electrode width with respect to the photosensor sections than the second transfer electrode layers.

Solid-state imaging device, method for driving the same, method for manufacturing the same, camera, and method for driving the same

A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).

Solid state imager with reduced smear

Method of making a solid state imager with reduced smear

A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is not formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).

Solid state imager with reduced smear and method of making the same

A charge coupled device (CCD) of a frame interline transfer type comprises a plurality of picture elements aligned in the vertical direction. Rows of aligned picture elements are arranged parallel and adjacent to each other. Polysilicon electrodes extending in the horizontal direction are arranged on a substrate covered with an insulating layer and used as electrodes for vertical transfer of signal charges. Metal wiring films extending in the vertical direction are arranged parallel and traverse the polysilicon electrodes covered with the insulating layer. The metal wiring films are used as electrodes for applying a clock pulse for vertical transfer of signal charges to the polysilicon electrodes. First, second and third openings are formed through the insulating layer such that the metal wiring films may contact the first, second and third polysilicon electrodes, respectively.

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Kanagawa, Japan

Junichi Furukawa