Hitachi, Ltd.

Renesas Electronics Corporation

Hitachi Microcomputer System, Ltd.

Texas Instruments Corporation

Renesas Technology Corp.

Hitachi Microcomputer

Junichi Arita

Masahiro Ichitani

Ichiro Anjoh

Akihiko Iwaya

Kunihiro Tsubosaki

Kunihiko Nishi

Akihiro Yaguchi

Asao Nishimura

Gen Murakami

Kazunari Suzuki

Ichiro Anjo

Masamichi Ishihara

Ryosuke Kimoto

Ryo Haruta

Masanori Shibamoto

Michio Tanimoto

Katsuyuki Matsumoto

Taisei Jin

Shunji Koike

Hiroshi Kitaguchi

Makoto Nishimura

Tetsuya Matsui

Masazumi Amagai

Darvin R Edwards

Mitsuaki Haneda

Akihisa Kaihara

Kazuko Hanawa

Lim T Beng

Nobuyoshi Kogawa

Chai T Chong

Hideo Miura

Makoto Kitano

Norio Okada

Yoshiaki Sato

Shintaro Yamamichi

Tomohiro Nishiyama

Kenichi Yamamoto

Junichi Saeki

Naotaka Tanaka

Ryuji Kohno

Isamu Yoshida

Yoshinori Miyaki

Hirokazu Honda

Shigeharu Tsunoda

Masaki Watanabe

Michitaka Kimura

Masashi Nishimoto

Tomoo Matsuzawa

Kenji Ujiie

Takeshi Terasaki

Kazuhiro Sugino

Toshihiro Yasuhara

Chikako Imura

Jun Ueno

Kiyomi Kojima

Kenichi Imura

An object of the present invention is to improve manufacturing efficiency of a semiconductor device. The method of manufacturing a semiconductor device includes a sealing step of sealing a semiconductor chip mounted on the wiring substrate. The sealing step includes a step of arranging the wiring substrate between an upper mold and a lower mold, suctioning a lower surface of the wiring substrate with the plurality of suction holes, thereby holding the wiring substrate the upper mold, and a step of sealing the semiconductor chip, an upper surface of the wiring substrate, and the plurality of side surfaces of the wiring substrate such that each of the semiconductor chip, the upper surface of the wiring substrate, and the plurality of side surfaces of the wiring substrate is covered with the resin in the lower mold.

Method of manufacturing semiconductor device

A compact electronic device as a constituent element of a wireless communication system using a sensor. A first feature of the device is that a first semiconductor chip is bare-chip-mounted over a front surface of a first wiring board in the form of a chip and a second semiconductor chip is bare-chip-mounted over a second wiring board in the form of a chip. A second feature is that a wireless communication unit and a data processing unit which configure a module are separately mounted. A third feature is that the first and second wiring boards are stacked in the board thickness direction to make up the module (electronic device).

Electronic device

A semiconductor device has a die pad, a heat dissipating plate in the form of a frame arranged between the die pad and leads so as to surround the die pad, members that connect the die pad and the inner edge of the heat dissipating plate, and a suspension lead linked to the outer extension of the heat dissipating plate. A semiconductor chip larger than the die pad is mounted over the die pad and the members. Top surfaces of the die pad and the members in opposition to the back surface of the chip are bonded to the back surface of the chip with silver paste. Heat is conducted from the back surface of the chip to the heat dissipating plate via the silver paste, the die pad, and the members, and dissipated to the outside of the semiconductor device via the leads.

Semiconductor device and method of manufacturing same

To improve the heat dissipation characteristics of a semiconductor device. The semiconductor device has a die pad, a heat dissipating plate in the form of a frame arranged between the die pad and a plurality of leads so as to surround the die pad, a plurality of members that connect the die pad and the inner edge of the heat dissipating plate, and a suspension lead linked to the outer extension of the heat dissipating plate, wherein a semiconductor chip the outer shape of which is larger than the die pad is mounted over the die pad and the members. The top surface of the die pad and the top surface of the members at the part in opposition to the back surface of the semiconductor chip are bonded to the back surface of the semiconductor chip in their entire surfaces with a silver paste. Heat in the semiconductor chip is conducted from the back surface of the semiconductor chip to the heat dissipating plate via the silver paste, the die pad, and the member, and dissipated to the outside of the semiconductor device therefrom via the lead.

A highly sensitive charged particle measuring device capable of measuring low-level alpha rays comprises in a measurement chamber provided with a sealable door , a test sample and a semiconductor detector , a radiation measuring circuit including a preamplifier connected to the semiconductor detector , a linear amplifier , and a pulse height analyzer , a charged particle emission amount arithmetic unit for performing the quantitative analysis of charged particles from its measurement, a display unit for displaying its analysis result, and further has an evacuation pipe line and a pure gas supply pipe line for performing supply and replacement of the pure gas in the measuring chamber

Charged particle measuring device and measuring method thereof

For preventing &agr;-rays induced soft errors in a semiconductor device in which solder bumps are connected with Cu wirings formed on Al wirings, bump lands connected with solder bumps and Cu wirings connected integrally therewith are constituted of a stacked film of a Cu film and an Ni film formed thereon, the thickness of the stacked film is larger than the thickness of the photosensitive polyimide resin film, the thickness of the inorganic passivation film, the thickness of the third Al wiring layer and the bonding pad and the thickness of the second interlayer insulative film formed below the Cu wirings and the bump land, that is, the bump land being constituted with such a thickness as larger than any of the thickness for the insulation material and the wiring material interposed between the MISFET (n-channel MISFET and p-channel MISFET) constituting the memory cell and the bump land.

Semiconductor device

A semiconductor device in which a semiconductor chip is bonded by a metal bond to one surface of a heat sink formed of a material with a thermal expansion coefficient is close to he semiconductor chip the heat sink is glued to a stiffener with a silicon adhesive with an elastic modulus of 10 MPa or less, a TAB tape is glued to the stiffener with an epoxy adhesive and the semiconductor chip is sealed with an epoxy sealing resin with an elastic modulus of 10 GPa or more for protection from outside.

Semiconductor device and mounting board

A semiconductor device in which a semiconductor chip is bonded by a metal bond to one surface of a heat sink formed of a material with a thermal expansion coefficient is close to the semiconductor chip , the heat sink is glued to a stiffener with a silicon adhesive with an elastic modulus of 10 MPa or less, a TAB tape is glued to the stiffener with an epoxy adhesive , and the semiconductor chip is sealed with an epoxy sealing resin with an elastic modulus of 10 GPa or more for protection from outside.

Semiconductor device, manufacturing method thereof and mounting board

A TSOP type semiconductor device having a LOC structure employing a copper (alloy) type frame prevents resin cracks that occur in a reliability test such as a temperature cycle test. The TSOP type semiconductor device has narrower common inner leads where a resin crack would be likely to occur first, and has a thinner chip.

TSOP type semiconductor device

A semiconductor device having inner leads secured via insulating adhesive films to the principal surface of a semiconductor chip and electrically connected to the respective external terminals of the semiconductor chip. The semiconductor device that can be about the size of the chip is so configured that an outer lead is continuously extended from each inner lead up to the rear surface opposite to the principal surface of the semiconductor chip in order to hold the leads and an external device in conduction.

Semiconductor device with lead structure on principal surface of chip

Semiconductor device with lead structure within the planar area of the

A method of producing a leadframe for use in semiconductor devices, comprises the steps of forming a space between leads 1a and 1b which are to be overlapped and welded each other, and welding the leads at a region including the space and melting and cutting off one of the leads. In one of the leads which is melted, cohesion and separation of molten metal occur in the region around the space. As a result, unnecessary portions such as an outer frame used for positioning can be cut off at the same time when the leads are connected by welding. Thus, high precision positioning of a plurality of element leadframes as well as high assembling productivity are achieved.

Semiconductor leadframe and its production method and plastic

Growing community of inventors

Tokyo, Japan

Junichi Arita