Other

Meidensha Corporation

Semiconductor Process Laboratory Co., Ltd.

Canon Sales Co., Inc.

Koki Company Limited

Sony Corporation

Junichi Aoki

Kazuo Maeda

Youichi Yamamoto

Taizo Oku

Takashi Koromokawa

Mitsuyasu Furusawa

Setsu Suzuki

Kenji Arai

Yuusuke Sato

Noboru Tokumasu

Kazuhiro Yukikata

Takeshi Suwazono

Kimiaki Mori

Munehiko Nakatsuma

Mayumi Takada

Provided is a flux activator containing a halogen compound represented by formula 1 below: 

Flux activator, flux, and solder

A vehicle-mounted power conversion device including: a capacitor for smoothing DC voltage; a power module for converting the smoothed DC voltage into AC voltage; a control substrate provided with a connector for a harness; a power module substrate provided with a connector for a harness; a harness connected to the control substrate at one end and connected to the power module substrate at the other end, thereby connecting the control substrate and the power module substrate electrically; and a case and cover for housing the capacitor, the power module, the control substrate, the power module substrate and the harness. In this device, a housing space defined between the case and cover is an integrated space, and a divided position between the case and cover is located further toward bottom wall of the case than the connector of the control substrate and the connector of the power module substrate.

Vehicle-mounted power conversion device

Provided is a flux that includes at least one polybutadiene (meth)acrylate compound selected from polybutadiene (meth)acrylate compounds and polybutadiene (meth)acrylate compounds, and a hydrogenated dimer acid.

Flux, solder composition, and method for manufacturing electronic circuit mounted substrate

The purpose of the present invention is to provide an inter-phase insulation sheet for a rotating electric machine, wherein it is possible to produce the effects of exerting excellent insertion workability between coil ends of different phases, of preventing the positional misalignment of the inter-phase insulation sheet during production work when forming the coils or when lacing, of preventing the inter-phase insulation sheet from tearing when lacing, and of being able to reliably ensure that the coil ends are insulated from one another even when the shape of the coil ends are not the same. In order to achieve the aforementioned purpose, an inter-phase insulation sheet () has a fixed section () and a movable section (). The movable section () has a base section (A) on one side and a flanged section (B) on the other side. The fixed section and the base section are placed so to completely overlap with one another and are inserted between coil ends () of different phases. Meanwhile, the flanged section passes the inner side () of one of the coil ends of different phases and is drawn from the insulation sheet insertion side of the coil end out to the side opposite that of the insulation sheet insertion side. Moreover, in order to facilitate the flanged section to be drawn out, a slit is formed between the fixed section and the base section and between the center and the side of the base section.

Inter-phase insulation sheet for rotating electric machine

In an image processing apparatus, a defect detection unit detects a defective pixel and a defect level thereof by comparing a maximum pixel value detected at each pixel position of a plurality of images captured via an image taking operation performed a plurality of times by an image sensor with a threshold value for detecting white defective pixels, and/or by comparing a minimum pixel value detected at each pixel position of the plurality of images with a threshold value for detecting black defective pixels. A defective pixel selection unit selects a predetermined plurality of defective pixels with high defect degrees, and registers defect data associated with the predetermined plurality of selected defective pixels in the defect data table. A defect correction unit corrects pixel values of pixels of the image output from the image sensor, in accordance with the defect data registered in the defect data table.

Image processing apparatus, image processing method, and program

The present invention relates to a film forming method of forming an interlayer insulating film having a low dielectric constant for covering wiring. The insulating film covering wiring is formed on a substrate by converting into a plasma and reacting a film forming gas including a component selected from the group consisting of alkoxy compounds having Si&mdash;H bonds and siloxanes having Si&mdash;H bonds and an oxygen-containing gas selected from a group consisting of O , N O, NO , CO, CO , and H O.

Film forming method, semiconductor device and semiconductor device manufacturing method

The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate on a surface of which a coating insulating film is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer for covering the coating insulating film by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si&mdash;H bonds and siloxane having Si&mdash;H bonds and any one oxygen-containing gas selected from a group consisting of O , N O, NO , CO, CO , and H O.

Semiconductor device and semiconductor device manufacturing method

The present invention relates to a semiconductor device manufacturing method of forming an inter-wiring layer insulating film having a low dielectric constant to cover a copper wiring. In construction, in a semiconductor device manufacturing method of forming an insulating film having a low dielectric constant on a substrate the insulating film is formed by plasmanizing a film forming gas, that consists of at least any one of alkyl compound having siloxane bonds and methylsilane (SiH (CH ) : n&equals;0, 1, 2, 3), any one oxygen-containing gas selected from a group consisting of N O, H O, and CO , and ammonia (NH ) to react.

There is provided a film forming pre-treatment method used when silicon containing insulating film, etc. are to be formed by virtue of thermal CVD method on a substrate 101 on which interconnection layers, etc. are formed. Before an insulating film is deposited on the substrate 101, gaseous H.sub.2 O is plasmanized and then a surface of the substrate 101 is exposed to such plasmanized H.sub.2 O.

Method of forming a film by using plasmanized process gas containing

A gas discharging device is provided which has a function as one of opposing electrodes to plasmanize a reaction gas and executes film formation and etching with a plasma gas. The device comprises a base body having a recess portion at its central portion and a through-hole for introducing a gas into the recess portion, a gas distributing plate provided in the recess portion for introducing the gas in a radial direction, and an annular gas discharging member for discharging the gas introduced by the gas distributing plate.

Growing community of inventors

Tokyo, Japan

Junichi Aoki