Samsung Electronics Co., Ltd.

Dow Corning Corporation

JunHyun Cho

Xiaobing Zhou

Joon-Young Choi

Taegon Kim

Younjoung Cho

Michael David Telgenhoff

Kyunghye Jung

The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same

Methods of forming an image sensor are provided. A method of forming an image sensor includes forming a trench in a substrate to define a unit pixel region of the substrate. The method includes forming an in-situ-doped passivation layer on an exposed surface of the trench. The method includes forming a capping pattern on the in-situ-doped passivation layer, in the trench. The method includes forming a photoelectric conversion region in the unit pixel region. Moreover, the method includes forming a floating diffusion region in the unit pixel region.

Methods of forming an image sensor

Growing community of inventors

Hwaseong-s, South Korea

JunHyun Cho