Samsung Electronics Co., Ltd.

Junhyuk Park

Jongseob Kim

Sunkyu Hwang

Joonyong Kim

Jaejoon Oh

Injun Hwang

Younghwan Park

Soogine Chong

Dongchul Shin

Junseok Kim

Boram Kim

Jiwon Im

Woochul Jeon

Bongki Son

Keunjoo Park

Hyunwoo Lee

Hyunku Lee

Keun Joo Park

JOngseok Seo

Jaeha Park

Minchul Yu

Raeyoung Kim

Hyungsoon Kim

Keunjoo Paul Park

An operation method of an image signal processing device includes receiving a raw pixel code from an external image sensor device including an image pixel, generating a non-linear pixel code by performing non-linear mapping on the raw pixel code, and outputting a downsized pixel code obtained by performing a masking operation on bit positions including a first bit position corresponding to a most significant bit of the non-linear pixel code and a second bit position corresponding to a least significant bit of the non-linear pixel code. An amplitude of the raw pixel code is linear to illuminance of a light incident onto the image pixel, an amplitude of the non-linear pixel code is non-linear to the amplitude of the raw pixel code, and the non-linear pixel code has a first code length, and the downsized pixel code has a second code length smaller than the first code length.

Image signal processing device and operation method thereof

Disclosed is a dynamic vision sensor. The dynamic vision sensor includes a photodiode configured to generate a first photodiode current in response to a change in light due to a movement of an object, a first transistor; a first node connected to the photodiode and the first transistor; a second node connected to the first transistor and being configured to receive a first voltage and receive a second voltage, a ground, a second transistor connected to the first node and the ground, a third node connected to the first transistor and the second transistor, and a current source connected to the third node, wherein the first voltage has a first level and the second voltage has a second level different from the first level.

Dynamic vision sensor with bias variation circuit, image signal processor and application processor

Provided are a power device and a method of manufacturing the same. The power device may include a channel layer; a source and a drain at respective sides of the channel layer; a gate on the channel layer between the source and the drain; a passivation layer covering the source, the drain, and the gate; and a plurality of field plates in the passivation layer. The plurality of field plates may have different thicknesses. The plurality of field plates may have different widths, different pattern shapes, or both different widths and different pattern shapes.

Power device and method of manufacturing the same

A vision sensor is provided. The vision sensor includes: a pixel array including a plurality of pixels, each of the plurality of pixels being configured to generate an event signal based on an event in which intensity of incident light changes; and an event detection circuit including a state register including a first flip-flop and a second flip-flop. The event detection circuit is configured to: based on the event signal, store first data in the first flip-flop, the first data indicating whether flicker has occurred in each of the plurality of pixels, store second data in the second flip-flop, the second data indicating whether the event has occurred in each of the plurality of pixels, and based on a comparison of the first data and the second data, identify and delete a portion of the second data in which the flicker has occurred.

Vision sensor, event signal processing method of the vision sensor, and imaging processing device including the vision sensor

Provided are a nitride semiconductor buffer structure and a semiconductor device including the same. The buffer structure may include a plurality of buffer layers between a substrate and an active layer. The active layer may include a nitride semiconductor. The plurality of buffer layers may be stacked on each other on the substrate. Each of the plurality of buffer layers may have a super lattice structure and may include a doped nitride semiconductor. The plurality of buffer layers may have different compositions from each other. Adjacent buffer layers, among the plurality of buffer layers, may have different doping concentrations from each other.

Nitride semiconductor buffer structure and semiconductor device including the same

An electronic device includes memory storing instructions, a radar configured to transmit an electromagnetic signal and receive a radar signal which is a reflected signal of the electromagnetic signal, the reflected signal being reflected from at least one target object, a touch pad configured to detect a touch of a user based on a designated touch threshold value, and at least one processor operatively coupled with the memory, the radar, and the touch pad. The instructions may, when executed by the at least one processor, cause the electronic device to: obtain the radar signal received by the radar; identify, based on the radar signal, a surrounding environment of the electronic device, and adjust the touch threshold value based on the surrounding environment.

Electronic device for controlling touch sensitivity based on radar and method of operating same

A vision sensor includes a memory; a pixel array including a plurality of pixels configured to generate an event signal by detecting an event in which an intensity of incident light changes; and an event detection circuit configured to read the event signal from the pixel array and configured to process the event signal, wherein the event detection circuit configured to: store, in the memory, a state map including a first state corresponding to a presence of an event of each of the plurality of pixels, and a second state corresponding to an absence of the event, and correct the event occurring in a selected pixel, based on the state map stored in the memory.

Vision sensor, event signal processing method thereof, and image processing device including the same

A pixel of a vision sensor includes a photoelectric converter configured to convert an optical signal into a current, a current-to-voltage converter configured to convert the current into a first voltage, an amplifier configured to generate an output voltage by amplifying a voltage level of the first voltage, at least one comparator configured to identify whether an event occurs based on comparing the output voltage with at least one threshold voltage, and generate an event signal based on identifying that the event occurs, and at least one counter configured to receive the event signal from the at least one comparator, obtain a count value by counting the event signal as information about an amount of change in illumination, and transmit output data comprising the count value.

Vision sensor and image processing device including the same

The present disclosure provides a high electron mobility transistor including a channel layer; a barrier layer on the channel layer and configured to induce formation of a 2-dimensional electron gas (2DEG) to the channel layer; a p-type semiconductor layer on the barrier layer; a first passivation layer on the barrier layer and including a quaternary material of Al, Ga, O, and N; a gate electrode on the p-type semiconductor layer; and a source electrode and a drain electrode provided on both sides of the barrier layer and separated from the gate electrode.

High electron mobility transistor and method of manufacturing the same

A semiconductor integrated circuit device includes: a channel layer, a barrier layer; a first p-type semiconductor layer and a second p-type semiconductor layer, spaced apart from each other on the barrier layer; and a passivation layer on the first p-type semiconductor layer and the second p-type semiconductor layer. The passivation layer may partially inactivate a dopant of at least one of the first p-type semiconductor layer and the second p-type semiconductor layer.

Semiconductor IC device including passivation layer for inactivating a dopant in a p-type semiconductor layer and method of manufacturing the same

Provided is a vision sensor including a pixel array including a plurality of pixels disposed in a matrix form, an event detection circuit configured to detect whether an event has occurred in the plurality of pixels and generate event signals corresponding to pixels from among the plurality of pixels in which an event has occurred, a map data processor configured to generate a timestamp map based on the event signals, and an interface circuit configured to transmit vision sensor data including at least one of the event signals and the timestamp map to an external processor, wherein the timestamp map includes timestamp information indicating polarity information, address information, and an event occurrence time of a pixel included in an event signal corresponding to the pixel.

Vision sensor, image processing device including the same, and operating method of the vision sensor

Provided is a high electron mobility transistor including: a channel layer comprising a 2-dimensional electron gas (2DEG); a barrier layer on the channel layer and comprising first regions and a second region, the first regions configured to induce the 2DEG of a first density in portions of the channel layer and the second region configured to induce the 2DEG of a second density different from the first density in other portions of the channel layer; source and drain electrodes on the barrier layer; a depletion formation layer formed on the barrier layer between the source and drain electrodes to form a depletion region in the 2DEG; and a gate electrode on the barrier layer. The first regions may include a first edge region and a second edge region corresponding to both ends of a surface of the gate electrode facing the channel layer.

Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.

Field effect transistor including gradually varying composition channel

A semiconductor device includes a channel layer including a channel; a channel supply layer on the channel layer; a channel separation pattern on the channel supply layer; a gate electrode pattern on the channel separation pattern; and an electric-field relaxation pattern protruding from a first lateral surface of the gate electrode pattern in a first direction parallel with an upper surface of the channel layer. An interface between the channel layer and the channel supply layer is adjacent to channel. A size of the gate electrode pattern in the first direction is different from a size of the channel separation pattern in the first direction. The gate electrode pattern and the electric-field relaxation pattern form a single structure.

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Pohang-si, South Korea

Junhyuk Park