Samsung Electronics Co., Ltd.

Junhyuk Lim

Woojin Lee

Sanghoon Ahn

Junghoo Shin

Jongmin Baek

Daehan Kim

A semiconductor integrated circuit device includes a substrate; a transistor on the substrate; an interlayer insulating film on the transistor; an insulating liner on the interlayer insulating film; a first insulating film on the insulating liner; and a first wiring layer on the interlayer insulating film and surrounded by the insulating liner. A height of a top surface of the first insulating film in a vertical direction from a main surface of the interlayer insulating film is different than a height of a top surface of the first wiring layer in the vertical direction. A step exists between the top surfaces of the first wiring layer and the first insulating film. A height of the first insulating film is greater than a height of the first wiring layer. A width of the first wiring layer gradually narrows as the first wiring layer extends upwards along the vertical direction.

Semiconductor integrated circuit device suppressing leakage current of multilayer wiring structures

An integrated circuit device includes a first insulation layer on a substrate, a lower wiring structure in the first insulation layer and including a metal layer and a conductive barrier layer, such that the metal layer is on the conductive barrier layer, an etch stop layer overlapping an upper surface of the first insulation layer and an upper surface of the conductive barrier layer and having a first thickness, a capping layer overlapping a portion of the upper surface of the metal layer and having a second thickness which is less than the first thickness, a second insulation layer overlapping the etch stop layer and the capping layer, and an upper wiring structure connected to another portion of the upper surface of the metal layer not overlapped by the capping layer in the second insulation layer.

Growing community of inventors

Hwaseong-si, South Korea

Junhyuk Lim