Lg Display Co., Ltd.

JunHyeon Bae

Yewon Hong

TaeWoong Moon

Yeonkyung Kim

Yeonwoo Shin

Kwanghwan Ji

Jonguk Bae

PilSang Yun

Jiyong Noh

DaeHwan Kim

YongHo Jang

A display apparatus comprises a display panel on which a plurality of pixels are displayed, a plurality of signal lines to which a signal required to drive the display panel is supplied, and an electrostatic discharge circuit connected between each of the plurality of signal lines and the electrostatic discharge line. The electrostatic discharge circuit includes first and second current paths between the signal line and the electrostatic discharge line, a first electrostatic discharge circuit connected to the first current path, including a plurality of first thin film transistors having a first gate electrode connected to the second current path and a second gate electrode connected to the first current path, and a second electrostatic discharge circuit connected to the second current path, including at least one second thin film transistor having a first gate electrode connected to the first current path and a second gate electrode connected to the first current path.

Display apparatus

A display device having a gate driver, which may reduce a leakage current of a TFT and power consumption, is disclosed. Each stage of the gate driver comprises an output portion including a pull-up transistor outputting a corresponding clock of a plurality of clocks as a gate signal in response to control of a Q node, and a pull-down transistor outputting a first gate-off voltage as an off-voltage of a gate signal in response to control of a QB node; a controller charging and discharging the Q node and charging and discharging the QB node to be in an opposite state of the Q node; and a back bias circuit having a back bias node capacitance-coupled with the Q node and generating a second gate-off voltage lower than the first gate-off voltage to apply the second gate-off voltage to the back bias node for an off-period of the Q node, wherein the back bias circuit may apply the back gate bias voltage to light shielding layers of some transistors, which are turned off for the off-period of the Q node, among transistors constituting the output portion and the controller, through the back bias node, thereby reducing or minimizing a leakage current of the corresponding transistors.

Display device having gate driver

A display device having a gate driver, which may reduce a leakage current of a TFT and power consumption, is disclosed. Each stage of the gate driver comprises an output portion including a pull-up transistor outputting a corresponding clock of a plurality of clocks as a gate signal in response to control of a Q node, and a pull-down transistor outputting a gate-off voltage as an off-voltage of a gate signal in response to control of a QB node; a controller charging and discharging the Q node and charging and discharging the QB node to be in an opposite state of the Q node; and a back bias circuit having a back bias node capacitance-coupled with the Q node and generating a back gate bias voltage to apply the back gate bias voltage to the back bias node for an off-period of the Q node, wherein the back bias circuit may apply the back gate bias voltage to light shielding layers of some transistors, which are turned off for the off-period of the Q node, among transistors constituting the output portion and the controller, through the back bias node, thereby reducing or minimizing a leakage current of the corresponding transistors.

Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, and a display panel and a display device using the same, in which a first conductor and a second conductor are provided at end portions of a semiconductor layer formed of oxide semiconductor. The first conductor and second conductor are electrically connected to a first electrode and a second electrode, and covered by a gate insulation layer. The oxide TFT includes a semiconductor layer provided on a buffer and including an oxide semiconductor, a gate insulation layer covering the semiconductor layer and the buffer, a gate electrode provided on the gate insulation layer to overlap a portion of the semiconductor layer, and a passivation layer covering the gate and the gate insulation layer.

Coplanar type oxide thin film transistor, method of manufacturing the same, and display panel and display device using the same

Disclosed is a thin film transistor including both an N-type semiconductor layer and a P-type semiconductor layer, a method for manufacturing the same, and a display device including the same, wherein the thin film transistor may include a first gate electrode on a substrate; a first gate insulating film covering the first gate electrode; a semiconductor layer on the first gate insulating film; a second gate insulating film covering the semiconductor layer; and a second gate electrode on the second gate insulating film, wherein the semiconductor layer includes the N-type semiconductor layer and the P-type semiconductor layer.

Thin film transistor, method for manufacturing the same, and display device including the same

A thin-film transistor includes a substrate, a first gate electrode formed on the substrate, a first active layer that is formed on the substrate and includes a first oxide semiconductor layer and a first barrier layer, a second active layer that is formed on the first active layer and includes a second oxide semiconductor layer and an intermediate barrier layer, a gate insulating layer that is formed on the second active layer, a second gate electrode that is formed on the gate insulating layer and is electrically connected to the first gate electrode, an interlayer insulating film formed on the second gate electrode, the first active layer and the second active layer, and a source electrode and a drain electrode electrically connected to the first active layer and the second active layer.

Growing community of inventors

Paju-si, South Korea

JunHyeon Bae