Advanced Ion Beam Technology, Inc.

Kingstone Semiconductor Company, Limited

Kingston Semiconductor Company, Limited

Junhua Hong

Jiong Chen

Yan Li

Cheng-Hui Shen

Linuan Chen

Tienyu Sheng

Jeff Boeker

Nai-Yuan Cheng

Yun-Ju Yang

A beam current transmission system and method are disclosed. The beam current transmission system comprises an extraction device, a mass analyzer, a divergent element, a collimation element and a speed change and turning element, wherein an analysis plane of the mass analyzer is perpendicular to a convergent plane of the extracted beam, and after entering an entrance, the beam is converged on a convergent point in a plane perpendicular to the analysis plane, and then is diverged from the convergent point and transmitted to the divergent element from an exit; the collimation element is used for parallelizing the beam in a transmission plane of the beam; and the speed change and turning element is used for enabling the beam to change speed so as to achieve a target energy while the beam is deflected so that the transmission direction of the beam changes by a first pre-set angle. Through the coordinated cooperation among a plurality of beam current optical elements, a relatively wider distribution can be formed in a vertical plane, so the invention is suitable to the processing of a wafer with a large size and also ensure better injection uniformity on the premise of avoiding energy contamination.

Beam transmission system and method thereof

A method for doping a semiconductor substrate is disclosed wherein a layer of a first conductivity type is first formed followed by forming a blocking layer with an open area. An etch process is performed through the open area to remove the layer of the first conductivity type to exposed the top surface of the semiconductor substrate. Dopant ions are introduced to form a dopant region of a second conductivity type on the beneath the top surface of the semiconductor substrate wherein the dopant region of the second conductivity type is not in contact with the dopant layer of the first conductivity type that is not etched off thus forming a PN structure to form diodes for the interdigitated back contact photovoltaic cells. Since the ion doping processes are self-aligned, the mask requirements are minimized and the production cost for solar cells are reduced.

PN structure formed by improved doping methods to simplify manufacturing process of diodes for solar cells

An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.

Method and device of ion source generation

Growing community of inventors

San Jose, CA, United States of America

Junhua Hong