University of Electronic Science and Technology of China

Junhong Li

Ping Li

A lateral insulated gate bipolar transistor (LIGBT) and method for eliminating the transistor tail current. The lateral insulated gate bipolar transistor comprises the silicon substrate, the buried oxide, and the drift region, the channel region, ohm-contact-high-doping region, the cathode, the gate dielectric, the anode contact, the gate, the cathode contact, the anode, which are placed above the silicon substrate, the electric field intensifier is placed at the upper surface of the drift region between the anode and the channel region to generate an electric field that starts from anode and points to the bottom surface of the electric field intensifier. The electric field intensifier is isolated from the drift region by the dielectric. The invention realizes performance improvements for both the conduction and the switching behaviors of the LIGBT device.

Lateral insulated gate bipolar transistor and method of eliminating the transistor tail current

Provided is a lateral power device having low specific ON-resistance and using a high-dielectric constant socket structure and a manufacturing method therefor, which relate to semiconductor power devices. A source electrode () of the device is of a first conduction type, and a channel region (), a silicon substrate () and an ohmic contact heavily-doped region are of a second conduction type; at least two isolation regions are arranged in an embedded manner in a drift region (); between the isolation regions are the drift region () and the channel region (); each isolation region extends from the source electrode () to a drain electrode (); high-dielectric constant material strips () and first insulation dielectric layers () form boundaries of the bottoms and sidewalls of the isolation regions; the isolation regions are filled with a first filling material (), a second insulation dielectric layer () is arranged on the upper surface of the drift region () and the upper surfaces of the isolation regions, and a gate electrode () directly contacts the first filling material () via holes on the second insulation dielectric layer (); and a source electrode lead-out wire () and a drain electrode lead-out wire () directly contact the source electrode () and the drain electrode () respectively via the holes on the second insulation dielectric layer (). The area of a power device can be greatly reduced on the premise of not reducing the withstand voltage and not increasing the specific ON-resistance.

Growing community of inventors

Chengdu, China

Junhong Li