Samsung Electronics Co., Ltd.

Junhee Shin

Kwangho Kim

Michael Choi

Yongjin Lee

Sangho Kim

Cheolhwan Lim

Jooseong Kim

Haejung Choi

Hyunmyoung Kim

A temperature measurement circuit includes a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature, a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage, a sensing circuit configured to generate a temperature-variant voltage based on a bias current, where the temperature-variant voltage is varied depending on the operation temperature, an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage, and an analog built-in self-test (BIST) circuit configured to generate a plurality of flag signals indicating whether each of the band-gap reference voltage, the measurement reference voltage, and a bias voltage corresponding to the bias current is included in a predetermined range.

Built-in self-test circuit and temperature measurement circuit including the same

An electronic device includes circuitry configured to output a first output signal shifting to a logic high level at a first time in response to a supply voltage reaching a first voltage level, output a second output signal shifting to a logic high level at a second time occurring after the first time in response to the supply voltage reaches a second level higher than the first level; and the circuitry includes an AND gate circuit configured to output a reset signal based on the first output signal and the second output signal.

Supply voltage detecting circuit, method of operating the same, electronic device comprising the same and electronic system comprising the same

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Yongin-si, South Korea

Junhee Shin