Samsung Electronics Co., Ltd.

Ibeam Materials, Inc.

Seoul National University

Samsung Sdi Co., Inc.

Snu Rdb Foundation

Junhee Choi

Joohun Han

Jinjoo Park

Kiho Kong

Nakhyun Kim

Junghun Park

Kyungwook Hwang

Sungjin Kang

Andrei Zoulkarneev

Deukseok Chung

Hoyoung Ahn

Dongho Kim

Junsik Hwang

Eunsung Lee

Sungwoo Hwang

Joosung Kim

Vladimir Matias

Chilhee Chung

Shinae Jun

Junseok Cho

Ho-Young Kim

Euijoon Yoon

Jai Yong Han

SungSoo Park

Vladmir Matias

Sangwon Kim

Sung Soo Park

Younghwan Park

Youngjun Park

Dongchul Shin

Tae-Hong Kim

Chan Wook Baik

Soon Cheol Kweon

Junggyu Nam

Joo Ho Lee

Dae Wook Park

Deuk Seok Chung

Seog Woo Hong

Taeho Shin

Shin Hye Chung

Dohyun Jung

Won Jun Shon

Seung Kyung Park

Myung-Seob Song

Eunhong Lee

A display device includes a display layer including a plurality of light-emitting devices and a plurality of switching devices in a one-to-one correspondence with the light-emitting devices, the plurality of light-emitting devices and the plurality of switching devices forming a monolithic structure, and a driving layer, wherein the plurality of light-emitting devices and the plurality of switching devices corresponding to the plurality of light-emitting devices are grouped into pixels and then arranged in the display layer, and the driving layer includes a plurality of driving devices configured to apply at least one driving signal to the display layer.

Display layer having monolithic structure and display device including the display layer

Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.

Nanorod LED, display apparatus including the same, and method of manufacturing the nanorod LED

A nanorod light emitting device includes a semiconductor light emitting nanorod, and a passivation film surrounding a sidewall of the semiconductor light emitting nanorod and having insulating properties, wherein the passivation film includes an insulating crystalline material having a same crystal structure as a crystal structure of the semiconductor light emitting nanorod.

Nanorod light emitting device, method of manufacturing the same, and display apparatus including the same

A single crystal semiconductor includes a strain compensation layer; an amorphous substrate disposed on the strain compensation layer; a lattice matching layer disposed on the amorphous substrate and including two or more single crystal layers; and a single crystal semiconductor layer disposed on the lattice matching layer, the lattice matching layer including a direction control film disposed on the amorphous substrate and including a single crystal structure, and a buffer layer including a material different from that of the direction control film, the buffer layer being disposed on the direction control film and including a single crystal structure.

Single crystal semiconductor structure and method of manufacturing the same

A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 μm to about 10 μm, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.

A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness h.

Single crystal semiconductor structure and method of fabricating the same

A display device includes an ion implantation region, a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer. The ion implantation region includes a plurality of ions and partitions the active layer into a plurality of light-emitting regions, and an average ion concentration ratio of each of the light-emitting regions is 2 to 15.

Light-emitting diode display device and manufacturing method thereof

Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.

Nanorod light emitting device, substrate structure including a plurality of nanorod light emitting devices, and method of manufacturing the substrate structure

A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

Micro light-emitting display apparatus and method of manufacturing the same

A light-emitting diode (LED) includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first electrode pad, a second electrode pad and a third electrode pad disposed on the second semiconductor layer in a direction from a corner of the second semiconductor layer to an opposite corner of the second semiconductor layer. An LED includes a first electrode pad disposed at a center of the LED and in contact with a P-type semiconductor layer and a second electrode pad in contact with an N-type semiconductor layer, wherein the second electrode pad is disposed a maximum distance away from the first electrode pad on the same surface.

Light-emitting diode and backplane and LED display including the same

A nanorod type micro-light emitting diode (LED) includes a nanorod stack structure including a multi-quantum well layer and emitting light from a side surface, and a functional material layer covering the side surface of the nanorod stack structure and increasing a total internal reflection angle of the nanorod stack structure. The functional material layer has a refractive index between a refractive index of the nanorod stack structure and a refractive index of air, and includes a plurality of material layers having a refractive index distribution in which a refractive index decreases as a distance from the side surface increases.

Nanorod type mirco-LED, pixel plate including the same, and display device and electronic devices including the pixel plate

A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.

Semiconductor LED and method of manufacturing the same

Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

Display apparatus and method of manufacturing the same

A nanorod semiconductor layer having a flat upper surface, a micro-LED including the nanorod semiconductor layer, a pixel plate including the micro-LED , a display device including the pixel plate, and an electronic device including the pixel plate are provided. The nanorod semiconductor layer includes: a main body; and an upper end formed from the main body, wherein the upper end includes: a first inclined surface; a second inclined surface facing the first inclined surface; and a flat upper surface between the first inclined surface and the second inclined surface, and a width of the upper end becomes narrower in an upward direction, and when a length of the upper end protruded from the main body (a thickness of the upper end) is Lan inclination angle between a surface extending parallel to a surface selected from the first and second inclined surfaces and the flat upper surface is β, and a width of the main body is D, a width Dof the flat upper surface satisfies Equation 1.1=−(2×1×tanβ)   <Equation 1>

Nanorod semiconductor layer having flat upper surface, micro-LED including the nanorod semiconductor layer, pixel plate including micro-LED, display device including the pixel plate, and electronic devices including the pixel plate

A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

Semiconductor device, method of fabricating the same, and display device including the same

Growing community of inventors

Seongnam-si, South Korea

Junhee Choi