Chinese Academy of Sciences

East China Normal University

Tera Fiberoptics, Inc.

Junhao Chu

Hong Shen

Xiangjian Meng

Tie Lin

Jianlu Wang

Xudong Wang

Yan Chen

Jingjing Liu

Xinning Huang

Shaohui Xu

Yiping Zhu

Tianle Guo

Dayuan Xiong

Fangyao Shi

Shaoqiang Chen

Hanxue Jiao

Lianwei Wang

Nanxi Shen

Chunfang Xu

Guangjian Wu

The present disclosure relates to the field of preparation of compound semiconductor nanomaterials, and in particular to a method for in-situ modification of mercury quantum dots in a traditional thermal injection process. It is characterized in that, in the traditional thermal injection process for synthesis of HgTe quantum dots, after a certain reaction time, a low boiling point polar solvent that is incompatible with a reaction solvent is rapidly injected, so that an interfacial separation of two liquid phases occurs in a mixed reaction, and then a selective crystal oriented surface modification is conducted on surfaces of mercury quantum dots.

Method for in-situ modification of mercury quantum dots in traditional thermal injection process

Disclosed are a mercury cadmium telluride-black phosphorus van der Waals heterojunction infrared polarization detector and a preparation method thereof. The structure of the detector from bottom to top comprises a substrate, a mercury cadmium telluride material, an insulating layer, a two-dimensional semiconductor black phosphorus, and metal electrodes. First, growing the mercury cadmium telluride material on the substrate, removing part of the mercury cadmium telluride by ultraviolet lithography and argon ion etching, filling with aluminum oxide as the insulating layer using an electron beam evaporation method, transferring the two-dimensional semiconductor material black phosphorus at the junction of mercury cadmium telluride and an insulating layer assisted by a polypropylene carbonate film, and preparing the metal source-drain electrodes by electron beam lithography technology combined with the lift-off process to form the mercury cadmium telluride-black phosphorus van der Waals heterojunction infrared polarization detector.

Mercury cadmium telluride-black phosphorous van der waals heterojunction infrared polarization detector and preparation method thereof

Disclosed in the invention is a zinc-iodine battery structure, which includes a housing, a cavity is formed in the housing, and a cation exchange membrane for dividing the cavity into two parts is disposed in a middle of the cavity; a glass fiber component for protecting the cation exchange membrane is disposed at a negative output end; a graphite felt impregnated with a ZnIsolution is disposed on an outside of the glass fiber component; and the graphite felt of the negative output end is coated with Bi powder, and a graphite felt of a positive output end is coated with Sm powder. Carbon plates serving as current leading-out channels of a battery are disposed on outsides of the graphite felts; and a return flow channel is disposed between the two graphite felts. By using a homogeneous cation exchange membrane with a low electrical resistance, a problem of serious self-discharging is overcome; and by using a flow battery with an open flow system, a problem of a change in pressure caused by a change in volume during charging and discharging is effectively solved. By disposing glass fiber products on two sides of the cation exchange membrane, a dendritic crystal generated during charging is unable to reach a separator, so that short circuit caused by puncture of the separator is avoided.

Zinc-iodine battery structure

A ferroelectric domain regulated optical readout mode memory and a preparing method thereof. The memory has such a structure that a two-dimensional semiconductor and a ferroelectric film layer are sequentially arranged on a conductive substrate. The method for preparing the memory includes the steps of preparing the two-dimensional semiconductor on the conductive substrate, preparing a ferroelectric film, then writing a periodic positive-reverse domain structure into the ferroelectric film on the two-dimensional semiconductor by using a piezoresponse force microscopy technology, and regulating a photoluminescent intensity of the two-dimensional semiconductor WSby using a ferroelectric domain. A fluorescent picture taken by a fluorescent camera shows light and dark areas corresponding to polarization directions, the light and dark areas represent an on state ('1') and an off state ('0') of the memory respectively, and accordingly the purpose of storage is achieved.

Ferroelectric domain regulated optical readout mode memory and preparing method thereof

An ultra-broad spectrum detector integrated with functions of a two-dimensional semiconductor and a ferroelectric material, where the device includes a substrate, a two-dimensional semiconductor, a source electrode, a drain electrode, a ferroelectric material and a gate electrode; the two-dimensional semiconductor, the source electrode and the drain electrode are arranged on an upper surface of the substrate, and the source electrode and the drain electrode are respectively arranged at two ends of an upper surface of the two-dimensional semiconductor; two sides of the two-dimensional semiconductor are respectively connected with the lower-layer metal of the source electrode and the lower-layer metal of the drain electrode; the ferroelectric material is arranged on the upper surfaces of the two-dimensional semiconductor, the source electrode and the drain electrode; and the lower surface of the gate electrode is connected with the upper surface of the ferroelectric material.

Ultra-broad spectrum detector integrated with functions of two-dimensional semiconductor and ferroelectric material

A method and system for control of light transmitted through a p-type semiconductor material, configured as part of a metal-insulator-semiconductor (MIS) structure. A variable gate voltage is applied to generate a variable number of sub-band charge carriers near an insulator-semiconductor interface in the MIS structure. Where the gate voltage is lower than a threshold voltage, transmission of light propagating adjacent to and parallel to the interface is relatively high. As the gate voltage is increased to a value larger than the threshold voltage, the number of sub-band carriers raised to a first sub-band energy level increases approximately monotonically. If the light wavelength is selected to have an associated photon energy equal to an energy difference between a second sub-band (which may be the continuum) and the first sub-band, a variable portion of the light propagating in the semiconductor will be depleted in pumping the sub-band carriers from the first sub-band state to the second sub-band state, thus providing controllable attenuation of light that propagates through, and exits from, the MIS structure.

Inversion layer optical switch

Growing community of inventors

Shanghai, China

Junhao Chu