Samsung Electronics Co., Ltd.

Jungyu Lee

Bilal Ahmad Janjua

Chiweon Yoon

Jihyun Park

Jongryul Kim

Hyunmog Park

Yumin Kim

Venkataramana Gangasani

Eunchan Lee

Hyungjin Kim

Yunpyo Hong

June-Hong Park

Ji-Hoon Lim

Minhwan Seo

Vivek Venkata Kalluru

Daehwan Kang

Sangwoo Bae

Sungmin Ahn

Wondon Joo

Hyunkook Park

Jiyoung Chu

Dongyoon Koo

Sungho Eun

Hyunkook Parak

Jeong Hoan Park

Jaeseung Jeong

Hancheon Yun

Yeon Soo Kwon

Bilal Ahmad

The present disclosure provides for memory apparatuses and systems including noise cancellation circuits, and operating methods thereof. In some embodiments, a memory device includes a first pad, a memory cell plane comprising a plurality of memory cells, a page buffer circuit, and a noise cancellation circuit. The page buffer circuit is configured to sense the memory cell plane, and identify, based on the sensing of the memory cell plane, a state stored in a memory cell of the plurality of memory cells, according to a ground voltage. The noise cancellation circuit is configured to receive a first ground voltage from the first pad, determine a reference voltage based on the first ground voltage, generate a second ground voltage that offsets a noise voltage, based on the reference voltage, and output the second ground voltage to the page buffer circuit.

Memory device and operating method thereof

A method of generating clock signals includes: receiving a bandgap reference voltage from a bandgap reference circuit; generating a first current having a first curvature characteristic based on the bandgap reference voltage; generating a second current having a second curvature characteristic based on the bandgap reference voltage; generating a first complementary to absolute temperature (CTAT) current by adding the first current to the second current; receiving a temperature-variable voltage and a temperature-fixed voltage from a voltage generator; generating an offset current based on the temperature-variable voltage and the temperature-fixed voltage; generating a reference current by adding the first CTAT current to the offset current; and generating the clock signals by alternately discharging a first capacitor and a second capacitor based on the reference current, and charging the first capacitor and the second capacitor based on a power voltage.

Clock signal generator and operating method thereof

A voltage generation circuit includes a current generation circuit, a slope trimming circuit and an offset trimming circuit. The current generation circuit is connected between an input voltage node and an output node that outputs a complementary to absolute temperature (CTAT) output voltage that decreases as an operation temperature increases. The current generation circuit generates a reference current flowing through the output node, the reference current having a constant magnitude regardless of the operation temperature. The slope trimming circuit is connected between the output node and an intermediate node. The slope trimming circuit adjusts a slope of the CTAT output voltage based on a first trimming code. The offset trimming circuit is connected between the intermediate node and a ground voltage node. The offset trimming circuit configured to adjust an offset voltage of the CTAT output voltage based on a second trimming code.

Voltage generation circuit and semiconductor memory device including the same

A method of bonding a die to a wafer using a die bonding system measures, using an obtained image showing interference fringes, a parallelism between the die and the wafer. In some embodiments, parallelism and die deformation are detected using interference fringes produced by an optical apparatus of the die bonding system. A parallelism measurement optical apparatus includes a light source, an optical assembly configured to control polarization of a reference light and a measurement light. In some embodiments, the measurement light is sequentially incident on and reflected from a first measurement surface and a second measurement surface that are spaced apart along a vertical direction to face each other, and is emitted to have information on parallelism between the first and second measurement surfaces. In some embodiments, a first polarizer is configured to interfere the reference light and the measurement light emitted from the optical assembly with each other. A light detector is configured to detect an interference signal of lights including the interference fringes.

Optical assembly for parallelism measurement, optical apparatus including the same, die bonding system and die bonding method using the same

A three-dimensional memory device includes: a plurality of word line groups including a plurality of word lines; a plurality of bit line groups extending in a vertical direction and including a plurality of bit lines spaced apart from the plurality of word lines; a plurality of memory cells arranged between the plurality of word lines and the plurality of bit lines and including a switching component and a variable resistance memory component; a plurality of global bit line groups connected to the plurality of bit line groups, wherein each of the plurality of global bit line groups includes a plurality of global bit lines electrically connected to a plurality of bit lines included in one bit line group, respectively; and a pad structure including a plurality of connection units and a plurality of pad layers, wherein the plurality of connection units are connected to the plurality of word line groups.

Three-dimensional memory device including a variable resistance memory

An error correction circuit includes a clock delay circuit configured to receive an input clock, delay the input clock by a desired time period to generate a delayed clock, and output one of the input clock and the delayed clock as an output clock in response to a select signal, an error detection circuit configured to, receive the output clock and input data, generate output data and latch data based on the output clock and the input data, and detect a margin error based on the output data and the latch data, and a control circuit configured to correct the detected margin error, the correcting the margin error including adjusting a level of the select signal based on whether the margin error has been detected.

Error correction circuit capable of automatically compensating for clock margin and method of operating the same

A memory device includes a plurality of memory cells, each including a switching device and an information storage device connected to the switching device and having a phase change material, the plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a decoder circuit determining at least one of the plurality of memory cells to be a selected memory cell, and a program circuit configured to input a programming current to the selected memory cell to perform a programming operation and configured to detect a resistance of the selected memory cell to adjust a magnitude of the programming current.

A resistive memory device includes: memory cells overlapping one another in a vertical direction within a cell array region and each including a switching element and a variable resistive element; first conductive lines each being connected to the switching element; a second conductive line connected to the variable resistive element and conductive pads arranged in a connection region and connected to respective one ends of the first conductive lines, respectively, and having different lengths in the second horizontal direction. A lower conductive pad from among the conductive pads includes a first portion covered by an upper conductive pad, and a second portion not covered by the upper conductive pad, and a thickness of each of the first and second portions in the vertical direction is greater than a thickness of each of the first conductive lines in the vertical direction.

Resistive memory device

A memory device includes a phase change memory (PCM) cell connected between a bit line and a word line. An X-decoder provides a word line voltage to the word line during a reset operation, and a Y-decoder provides a bit line voltage to the bit line during the reset operation. A voltage bias circuit generates the word line voltage and the bit line voltage based on a first bias during a first period of the reset operation, the word line voltage and the bit line voltage based on a second bias greater than the first bias during a second period of the reset operation, and the word line voltage and the bit line voltage based on a third bias smaller than the first and second biases during a third period of the reset operation.

Memory device including phase change memory cell and operation method thereof

A resistive memory device includes a memory cell array of resistive memory cells connected to word and bit lines, each bay of the memory cell array including K tiles; a write/read circuit connected to the memory cell array through a row decoder and a column decoder, the write/read circuit being configured to perform a write operation in a target tile of the memory cell array, the write/read circuit comprising write drivers corresponding to the bays; a control voltage generator configured to generate first and second control voltages based on a reference current; and a control circuit configured to control the write/read circuit and the control voltage generator. A first write driver that corresponds to a first bay of the bays is configured to provide the target tile with a write current corresponding to a physical position of a selected memory cell of the target tile in the memory cell array.

Resistive memory devices and methods of operating resistive memory devices

A nonvolatile memory device includes a bank and a program current generator. The bank includes a memory cell array that includes phase change memory cells storing data based on a program current, and the transfer element transfers the program current to the memory cell array through current mirroring. The program current generator generates the program current based on a reference current.

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Hwaseong-si, South Korea

Jungyu Lee