Electronics and Telecommunications Research Institute

JungWook Lim

Sun Jin Yun

Hyun-Tak Kim

Sun-Jin Yun

Yong-Wook Lee

Byung-Gyu Chae

Kwang Hoon Jung

Seong Hyun Lee

Gyungock Kim

Kwang-Yong Kang

Bong-Jun Kim

Bongjun Kim

Jeho Na

Kyu Sung Lee

Sungyoul Choi

Yoo Jeong Lee

Changbong Yeon

Tae Yoon Kim

Sung-Youl Choi

Sang-Kuk Choi

Chang Bong Yeon

Jaemin Lee

Ga Young Kim

Jun Kwan Kim

Junjae Yang

Hyun Jun Chai

Provided is a synaptic device including a substrate, a channel layer on the substrate, a gate dielectric layer on the channel layer; and a gate electrode on the gate dielectric layer, wherein the gate dielectric layer includes a charge supply dielectric film and a piezoelectric film, wherein the charge supply dielectric film includes a metal oxide or metal sulfide, wherein the piezoelectric film includes a piezoelectric material that converts a pressure stimulation into an electrical signal, wherein accordance to a change in a signal applied to the gate electrode, a magnitude and aspect of a current flowing through the channel layer are changed.

Synaptic device

Provided is a transparent solar cell including a first transparent electrode, a second transparent electrode, a light absorbing layer, a first color implementation layer, and a second implementation layer, wherein each of the first color implementation layer and the second implementation layer includes an insulation layer and a conductive layer. By using a double layer, it is possible to provide a colored transparent solar cell securing stability and durability and implementing colors on both sides.

Colored transparent solar cell

Provided is a method for fabricating high-uniformity and high-quality metal chalcogenide thin films. The method for fabricating metal chalcogenide thin films may include forming a metal precursor thin film including a metal thin film and a chalcogen thin film disposed on the upper surface or lower surface of the metal thin film; and performing a chalcogenization process for providing a chalcogen source on the metal precursor thin film to form a first metal chalcogenide thin film.

Method for fabricating metal chalcogenide thin films

Provided is photochromic glass. The photochromic glass includes a photochromic layer having visible-light transmittance decreased at short-wavelength light and having visible-light transmittance increased at long-wavelength light, a short-wavelength transmission layer provided on a surface of the photochromic layer to transmit only the short-wavelength light among lights entering the photochromic layer, and a wavelength conversion layer provided on another surface of the photochromic layer opposite to the surface to convert a wavelength of light entering the photochromic layer into a long wavelength, or a long-wavelength transmission layer transmitting only the long-wavelength among lights entering the photochromic layer. The visible-light transmittance of the photochromic layer may adjust on both surfaces of the photochromic layer through the incident direction of light. It is possible to implement various colors according to the photochromic layer and further provide a heat insulation function due to the blocking of an infrared ray of the short-wavelength transmission layer.

Photochromic glass

Provided is method of manufacturing a conductive film. The method includes forming a conductive film including a plurality of flakes on a substrate, wherein the conductive film is a semiconductor or a conductor, and forming a passivation region selectively on a boundary between the flakes adjacent to each other. The passivation region includes a metal compound selected from the group consisting of metal chalcogenide and transition metal chalcogenide. The forming of the passivation region includes providing a solution containing a first precursor including a cation of the metal compound and a second precursor including an anion of the metal compound on the conductive film. pH of the solution is between 7.0 and 10.0.

Nano flake defect passivation method and electronic device manufactured using the same

Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.

Optically restorable semiconductor device, method for fabricating the same, and flash memory device using the same

Provided is an apparatus for monitoring a gas and plasma process equipment including the same. The apparatus includes: a housing including a gas inflow hole, a gas discharge hole, and windows; a light source disposed adjacent to one of the windows outside the housing to provide source light to a gas supplied between the gas inflow hole and the gas discharge hole; a sensor disposed adjacent to the other of the windows outside the housing to detect fluorescence emitted from the gas by the source light; and a coil disposed in the housing between the gas inflow hole and the gas discharge hole to heat and decompose the gas between the light source and the sensor, thereby increasing the fluorescence emitted from the gas.

Apparatus for monitoring gas and plasma process equipment including the same

A solar cell includes a first electrode; a lower light absorption layer disposed on the first electrode; an upper light absorption layer disposed on the lower light absorption layer; and an intermediate reflector layer provided between the lower light absorption layer and the upper light absorption layer, the intermediate reflector layer being comprised of copper oxide. The intermediate reflector layer includes a plurality of copper oxide layers including a lower copper oxide layer making contact with the lower light absorption layer, an upper copper oxide layer making contact with the upper light absorption layer, and an intermediate copper oxide layer provided between the lower copper oxide layer and the upper copper oxide layer. The plurality of copper oxide layers have respective oxygen amounts that gradually increase from the upper copper oxide layer to the lower copper oxide layer.

Silicon solar cell

Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.

Electronic devices and method of fabricating the same

Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor. The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor. The secondary battery anti-explosion circuit includes a secondary battery, the MIT sensor attached to the secondary battery to sense the temperature of the secondary battery and thus to prevent the possible explosion of the secondary battery, and a protection circuit body powered by the secondary battery.

Programmable MIT sensor using the abrupt MIT device, and alarm apparatus and secondary battery anti-explosion circuit including the MIT sensor

Provided is an electro-luminescent device (ELD) including a metal-insulator transition (MIT) layer. The ELD includes: a substrate; a EL phosphor layer positioned on the substrate and comprising luminescent center ions generating light; the MIT layer disposed on a surface of the EL phosphor layer and being abruptly changed from an insulator to a metal according to a variation of a voltage; a first insulator adhered to the MIT layer to distribute a voltage applied from an external source; and a second insulator disposed on the other side of the EL phosphor layer.

Electro-luminescent device including metal-insulator transition layer

Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.

Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit

Provided are a method for antireflection treatment of a zinc oxide film and a method for manufacturing a solar cell using the same. In the anti-reflection treatment, a substrate is prepared, then a polycrystalline zinc oxide film is formed on the substrate. A surface of the polycrystalline zinc oxide film is textured. Here, the roughening of the surface of the polycrystalline zinc oxide film comprises wet-etching the polycrystalline zinc oxide film on the substrate using an etching solution mixed with nitric acid and hydrogen peroxide.

Method for antireflection treatment of a zinc oxide film and method for manufacturing solar cell using the same

Provided is a logic circuit comprising a metal-insulator transition (MIT) device, including: an MIT device unit including an MIT thin film, an electrode thin film contacting the MIT thin film, and at least one MIT device undergoing a discontinuous MIT at a transition voltage V; a power source unit including at least one power source applying power to the MIT device; and at least one resistor connected to the MIT device, wherein a logic operation is performed on a signal through the power source to output the result of the logic operation as an output signal.

Growing community of inventors

Daejeon, South Korea

JungWook Lim