Qualcomm Incorporated

Jungwon Suh

Dexter Tamio Chun

Jung Pill Kim

Xiangyu Dong

Deepti Vijayalakshmi Sriramagiri

Michael Hawjing Lo

Yanru Li

Shyamkumar Thoziyoor

Subbarao Palacharla

Pankaj Deshmukh

Wuyang Hao

Seung Hyuk Kang

David Ian West

Xiaochun Zhu

Kangho Lee

Laurent Rene Moll

Alain Artieri

Hari Rao

Tae Hyun Kim

Olivier Alavoine

Xia Li

Matthew Michael Nowak

Anand Srinivasan

Vaishnav Srinivas

Hyunsuk Shin

Wah Nam Hsu

Asaf Ashkenazi

Steven Mark Millendorf

Nicholas K Yu

Mosaddiq Saifuddin

Mahalingam Nagarajan

Xavier Loic Leloup

Joon Young Park

Ravindra Kumar

Vishakh Balakuntalam Visweswara

Jonghae Kim

Shiqun Gu

Tirdad Sowlati

Alexander Gantman

Michael J Brunolli

Taehyun Kim

Sungryul Kim

Stephen A Molloy

Thomas R Toms

Jack K Wolf

Haw-Jing Lo

Urmi Ray

Jason Alan Thurston

Vikrant Kumar

Woo Tag Kang

Anurag Nannaka

Jung Pil Kim

Riccardo Iacobacci

Hari M Rao

Steven M Millendorf

This disclosure provides systems, methods, and devices for memory systems that support processing data and metadata within a memory of a memory device. In a first aspect, a method of controlling a memory device includes executing a first request in a first rank of the memory device during a first time period, wherein the first time period comprises a first data access portion and a first metadata access portion; and executing a second request in a second rank of the memory device during a second time period, wherein the second time period comprises a second data access portion and a second metadata access portion, wherein executing the first request in the first rank and executing the second request in the second rank comprises interleaving the first request and the second request between the first rank and the second rank. Other aspects and features are also claimed and described.

Rank interleaving for system meta mode operations in a dynamic random access memory (DRAM) memory device

A hybrid memory system with improved bandwidth is disclosed. In one aspect, a memory system is provided that increases bandwidth relative to the JEDEC low-power double data rate version 5 (LPDDR5) standard. This improvement is made possible by increasing a data conductor count from sixteen to twenty-four. Optionally, the bandwidth may be further improved by increasing a clock frequency from a first value to a second value. This allows the hybrid memory system to provide improved bandwidth without the complications of merely doubling pin counts or doubling clock speed. Further, coding techniques tailored to the pin count and pin layout are provided.

Hybrid memory system with increased bandwidth

Various embodiments include methods and devices for reducing latency in pseudo channel based memory systems. Embodiments may include a first pseudo channel selection device configured to selectively communicatively connect one of a plurality of pseudo channels to a first input/output (IO), and a second pseudo channel selection device configured to selectively communicatively connect one of the plurality of pseudo channels to a second IO, in which the first pseudo channel selection device and the second pseudo channel selection device may be operable to communicatively connect a first pseudo channel of the plurality of pseudo channels to the first IO and to the second IO concurrently. Embodiments may include the pseudo channel based memory system configured to receive a memory access command targeting the first pseudo channel, and use a first pseudo channel data bus and a second pseudo channel data bus to implement the memory access command.

Reducing latency in pseudo channel based memory systems

Various embodiments include systems and methods for improving the efficiency of a memory subsystem in a computing device. The memory subsystem may be configured to detect memory access events and determining their associated timings and determine an efficiency of the memory subsystem based on operational parameters of the memory subsystem, the detecting memory access events, and associated timings. The memory subsystem may adjust the operational parameters of the memory subsystem based on the determined efficiency of the memory subsystem. The memory subsystem may dynamically modify the operations of the memory subsystem based on the adjusted operational parameters.

Self-characterizing, evaluating, and adaptive high performance memory controller

Methods and apparatuses for a system error-correction code function are presented. The apparatus includes a memory configured to communicate with a host via at least one data connection and at least one non-data connection. The memory includes a memory array. The memory array includes a first portion and a second portion. The memory is further configured to, in a first mode, store and output data in the first portion and the second portion of the memory array. The first portion is addressable by a first address, and the second portion is addressable by a second address. The memory is further configured to, in a second mode, receive ECC of the data from the host via the at least one non-data connection, store the data in the first portion of the memory array, and store the ECC of the data in the second portion of the memory array based on the first address.

System and memory with configurable metadata portion

This disclosure provides systems, methods, and devices for memory systems that support metadata. In a first aspect, a method of handling data and metadata at a memory device includes receiving data from the host via the at least one data connection into the first plurality of registers; receiving metadata from the host via the at least one non-data connection into the second plurality of registers; storing the data in the first portion of the memory array; and storing the metadata in the second portion of the memory array. Other aspects and features are also claimed and described.

Metadata registers for a memory device

This disclosure provides systems, methods, and devices for memory systems that support operating a least portions of a memory core at a frequency lower than a memory clock to reduce power consumption and cost. In a first aspect, a memory controller includes a first core for scheduling a first memory operation for a first portion of a clock cycle of the memory clock and includes a second core for scheduling a second memory operation for a second portion of the clock cycle of the memory clock. Other aspects and features are also claimed and described.

Multiple-core memory controller

A memory system with adaptive refresh commands is disclosed. In one aspect, a memory system or device that has multiple banks within a channel may receive a per bank command that indicates a first bank to be refreshed and provides additional information about a second bank to be refreshed. In a further exemplary aspect, a quad bank refresh command may be sent that indicates a first bank to be refreshed and provides additional information about second through fourth banks to be refreshed. In a further exemplary aspect, an octa bank refresh command may be sent that indicates a first bank to be refreshed and provides additional information about second through eighth banks to be refreshed. The three new refresh commands allow adjacent or spaced banks to be refreshed.

Memory system with adaptive refresh

Various embodiments include methods for implementing flexible ranks in a memory system. Embodiments may include receiving, at a memory controller, a first memory access command and a first address at which to implement the first memory access command in a logical rank, generating, by the memory controller, a first signal configured to indicate to a first memory device of the logical rank to implement the first memory access command via a first partial channel, sending, from the memory controller, the first signal to the first memory device, generating, by the memory controller, a second signal configured to indicate to a second memory device of the logical rank that is different from the first memory device to implement the first memory access command via a second partial channel, and sending, from the memory controller, the second signal to the second memory device.

Flexible dual ranks memory system to boost performance

Various embodiments include a computing device memory system having a memory device, a memory physical layer communicatively connected to the memory device, a first input/output (IO) voltage supply electrically connected to the memory device and to the memory physical layer, and a second TO voltage supply electrically connected to the memory device and to the memory physical layer, in which the memory device and the physical layer are configured to communicate data of a memory transaction using a 3 level pulse amplitude modulation (PAM) IO scheme.

Low power memory system using dual input-output voltage supplies

System and memory with configurable error-correction code (ECC) data protection and related methods

Methods and apparatuses for improve data clock to reduce power consumption are presented. The apparatus includes a memory configured to receive a data clock from a host via a link and to synchronize the data clock with the host. The memory includes a clock tree buffer configured to toggle based on the data clock to capture write data or to output read data and a command decoder configured to detect a data clock suspend command while the data clock is synchronized between the host and the memory. The clock tree buffer is configured to disable toggling based on the data clock in response to the command decoder detecting the data clock suspend command. the host includes a memory controller configured to provide a data clock suspend command to the memory via the link while the data clock is synchronized between the host and the memory.

Enhanced data clock operations in memory

In a conventional memory subsystem, a memory controller issues explicit refresh commands to a DRAM memory device to maintain integrity of the data stored in the memory device when the memory device is in an auto-refresh mode. A significant amount of power may be consumed to carry out the refresh. To address this and other issues, it is proposed to allow a partial refresh in the auto-refresh mode in which the refreshing operation may be skipped for a subset of the memory cells. Through such selective refresh skipping, the power consumed for auto-refreshes may be reduced. Operating system kernels and memory drivers may be configured to determine areas of memory for which the refreshing operation can be skipped.

Partial refresh technique to save memory refresh power

Growing community of inventors

San Diego, CA, United States of America

Jungwon Suh