Samsung Electronics Co., Ltd.

Jungsoo Yoon

Hyeonjin Shin

Soyoung Lee

Kyung-Eun Byun

Hyunseok Lim

Sangwon Kim

Changseok Lee

Yeonchoo Cho

Keunwook Shin

Hyunjae Song

Eunkyu Lee

Kaoru Yamamoto

Minhyuk Cho

Geuno Jeong

Provided are nanocrystalline graphene and a method of forming the same. The nanocrystalline graphene may include a plurality of grains formed by stacking a plurality of graphene sheets and has a grain density of about 500 ea/μmor higher and a root-mean-square (RMS) roughness in a range of about 0.1 or more to about 1.0 or less. When the nanocrystalline graphene has a grain density and a RMS roughness with these ranges, nanocrystalline graphene capable of covering the entirety of a large area on a substrate as a thin layer may be provided.

Nanocrystalline graphene and method of forming nanocrystalline graphene

A wiring structure includes a first conductive pattern including doped polysilicon on a substrate, an ohmic contact pattern including a metal silicide on the first conductive pattern, an oxidation prevention pattern including a metal silicon nitride on the ohmic contact pattern, a diffusion barrier including graphene on the oxidation prevention pattern, and a second conductive pattern including a metal on the diffusion barrier.

Wiring structures, methods of forming the same, and semiconductor devices including the same

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Suwon-si, South Korea

Jungsoo Yoon