Samsung Electronics Co., Ltd.

Jungseok Ryu

Wooju Kim

Heejae Nam

YeongBeom Ko

Junho Yoon

Junyun Kweon

Haemin Park

Yeongbeom Ko

Hwayoung Lee

A semiconductor device includes a first chip structure including a wiring structure disposed on a circuit elements, and first bonding metal layers and a first bonding insulating layer on the wiring structure, an upper surface of the first chip structure having an edge region and an inner region surrounded by the edge region, a second chip structure disposed on an inner region of the upper surface of the first chip structure, and including second bonding metal layers respectively bonded to the first bonding metal layers, a second bonding insulating layer bonded to the first bonding insulating layer, and a memory cell layer on the second bonding metal layers and the second bonding insulating layer, an insulating capping layer disposed on an upper surface of the second chip structure and extending to the edge region, and a connection pad disposed on a region of the insulating capping layer.

Semiconductor device and method of manufacturing the same

Disclosed are wafer structures and semiconductor devices. A semiconductor device may include a substrate and a cell array structure on the substrate. The substrate may include a device region and a dummy region surrounding the device region in a plan view. The cell array structure may include a plurality of first dielectric layers, a plurality of gate structures, a vertical channel structure, and a dummy pattern. The vertical channel structure may be on the device region and may penetrate the plurality of gate structures and the plurality of first dielectric layers. The cell array structure includes an outer sidewall above an edge of the substrate and a recessed portion on the outer sidewall of the cell array structure. The dummy pattern may cover a sidewall of the recessed portion and a bottom surface of the recessed portion. The dummy pattern and vertical channel structure may include a same material.

Wafer structure and semiconductor device

A semiconductor package includes a semiconductor chip on a substrate. The semiconductor chip includes an active region, and a scribe lane in continuity with an edge of the active region. A non-conductive film (NCF) is between the substrate and the semiconductor chip, the non-conductive film (NCF) at least partially defines a recess region overlapping with the scribe lane in plan view and extending on the active region.

Semiconductor package including non-conductive film and method for forming the same

A semiconductor package includes a substrate that includes a bonding pad, a first semiconductor chip disposed on the substrate, a second semiconductor chip disposed on a top surface of the first semiconductor chip that is opposite to the substrate, a chip pad disposed on the top surface of the first semiconductor chip, and a bonding wire that connects the chip pad to the bonding pad. The bonding wire includes a first upward protrusion and a second upward protrusion that are convexly curved in a direction away from the substrate. The second semiconductor chip has a first side surface between the first upward protrusion and the second upward protrusion.

Growing community of inventors

Asan-si, South Korea

Jungseok Ryu