Samsung Electronics Co., Ltd.

Jungseob So

Hoonjoo Na

Taeseong Kim

Sonkwan Hwang

Sohye Cho

The semiconductor device includes a lower chip structure including a peripheral circuit, a first memory chip structure on the lower chip structure, and a second memory chip structure on the first memory chip structure. The first memory chip structure includes a first stack structure and a first vertical memory structure. The first stack structure includes first gate lines stacked in a vertical direction and extending in a first horizontal direction. The first vertical memory structure penetrates through the first gate lines in the vertical direction. The second memory chip structure includes a second stack structure and a second vertical memory structure. The second stack structure includes second gate lines stacked in the vertical direction and extending in a second horizontal direction, perpendicular to the first horizontal direction. The second vertical memory structure penetrates through the second gate lines in the vertical direction.

Semiconductor device including a lower chip including a peripheral circuit and first and second memory chips vertically stacked thereon and data storage system including the same

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Seoul, South Korea

Jungseob So