Samsung Electronics Co., Ltd.

Jungpyo Hong

Hyungjun Kim

Jongwoo Sun

Sangwuk Park

Sungyeon Kim

Kwangnam Kim

Seungjae Lee

Jinyoung Park

Ilyoung Han

Joonkyu Rhee

Dongseok Lee

Haejoong Park

Nohsung Kwak

Yonghwan Kim

Hyunchul Yoon

Sangrok Oh

Chanmin Lee

Yuna Lee

Yangdoo Kim

HanNa Cho

A method of fabricating a semiconductor device includes forming an insulating layer and a peripheral structure on first and second regions of the substrate, forming first and second mask layers on the insulating layer and the peripheral structure, patterning the first and second mask layers to form first and second mask structures on the first and second regions, etching the insulating layer using the first and second mask structures as an etching mask, to form insulating patterns, forming a sacrificial layer in spaces between two adjacent insulating patterns on the first region, removing the second mask pattern on the first region by a dry etching process, forming an anti-oxidation layer on a surface of the second mask layer on the second region after removing the second mask pattern on the first region, and removing the second mask layer with the anti-oxidation layer by a wet etching process.

Method of fabricating semiconductor device

Methods of forming a semiconductor device may include: providing a substrate on which a layer is formed; forming a lower hard-mask layer, which includes silicon, on the layer; forming an upper hard-mask pattern, which includes oxide, on the lower hard-mask layer; forming a lower hard-mask pattern by etching the lower hard-mask layer using the upper hard-mask pattern as an etch mask and using an etching gas that includes a metal-chloride-based first gas and a nitride-based second gas; and forming a plurality of contact holes in the layer by etching the material layer using the lower hard-mask pattern as an etch mask.

Methods of forming semiconductor devices

A substrate treating apparatus, including a process chamber having a bottom portion configured to secure a substrate while a substrate treating process is performed on the substrate; and a dielectric window arranged at an upper portion of the process chamber to define a process space, and including: an insulative body, an antenna disposed on an upper surface of the insulative body, a protection layer disposed on a lower surface of the insulative body, and an etch resistor protruding from at least a portion of the protection layer toward the process space, wherein, based on power being applied to the antenna, a plasma is generated in the process space, and wherein the insulative body is protected from the plasma by the protection layer and the etch resistor.

Substrate treating apparatus and substrate treating system having the same

A semiconductor manufacturing apparatus including at least one load module including a load port on which a substrate container is located, a plurality of substrates being mountable on the substrate container; at least one loadlock module including a loadlock chamber directly connected to the substrate container, the loadlock chamber interchangeably having atmospheric pressure and vacuum pressure, a first transfer robot within the loadlock chamber, and a substrate stage within the loadlock chamber, the plurality of substrates being mountable on the substrate stage; a transfer module including a transfer chamber connected to the loadlock chamber, a second transfer robot within the transfer chamber, and a substrate aligner within the transfer chamber; and at least one process module including at least one process chamber connected to the transfer module.

Semiconductor manufacturing apparatus

Methods of manufacturing a semiconductor device are provided. The method may include forming an etch target layer on a substrate, forming a carbon layer doped with boron on the etch target layer, a top end portion of the carbon layer having a different boron concentration from a bottom end portion of the carbon layer, patterning the carbon layer to form at least one opening exposing the etch target layer, and etching the exposed etch target layer using the carbon layer as an etch mask.

Methods of manufacturing a semiconductor device

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Seoul, South Korea

Jungpyo Hong