Samsung Electronics Co., Ltd.

Jungpil Lee

Kyungkyu Kim

Woonbae Kim

A semiconductor package including a substrate including a through hole, an image sensor structure on the substrate, and a first transparent substrate on the substrate and spaced apart from the image sensor structure may be provided. The image sensor structure includes a logic chip on the substrate, a first sensing chip on an active surface of the logic chip, and a second sensing chip on an inactive surface of the logic chip and connected to the active surface of the logic chip through a first via that vertically penetrates the logic chip. On a bottom surface of the logic chip, at least a portion of one of the first sensing chip and the second sensing chip is in the through hole.

Semiconductor package including stack structure of logic chip and sensing chips

Disclosed are semiconductor packages and thermal management methods thereof. The semiconductor package includes an upper semiconductor chip; and a lower semiconductor chip connected via a plurality of through electrodes to the upper semiconductor chip. The lower semiconductor chip may include at least one temperature sensor configured to sense a temperature of the upper semiconductor chip, a power control unit connected to the at least one temperature sensor, a power switching element connected to at least a first one of the plurality of through electrodes, and a clock control element connected to at least a second one of the plurality of through electrodes.

Semiconductor package and thermal management method thereof

A semiconductor device includes a first integrated circuit and a second integrated circuit disposed on a semiconductor substrate and spaced apart from each other. A wiring structure is disposed on the semiconductor substrate and electrically connects the first integrated circuit and the second integrated circuit. A first TSV area and a second TSV area are disposed between the first integrated circuit and the second integrated circuit The first and second TSV areas include a plurality of first and second TSV structures penetrating through the semiconductor substrate, respectively. The wiring structure passes between the first TSV area and the second TSV area.

Growing community of inventors

Hwaseong-si, South Korea

Jungpil Lee