Samsung Electronics Co., Ltd.

Neurobiogen Co., Ltd.

Jungmoo Lee

Hideki Horii

Jong Hyun Park

Ae Nim Pae

Kwangmin Park

Jeonghee Park

Changjoon Lee

Gyuhwan Oh

Ki Duk Park

Jiho Park

Sang Min Lim

Yoon Ha

Soo-Jin Oh

Hye Yeong Lee

A variable resistance memory device includes a first electrode on a substrate, a variable resistance pattern on the first electrode, a second electrode on the variable resistance pattern, a selection pattern structure on the second electrode, and a third electrode on the selection pattern structure. The selection pattern structure may include a first leakage current prevention pattern and a selection pattern sequentially stacked, and the first leakage current pattern may include a two-dimensional transition metal dichalcogenide (TMDC) material.

Variable resistance memory devices implementing two-dimensional transition metal dichalcogenide materials

A semiconductor device includes a base structure comprising a semiconductor substrate, a first conductive structure disposed on the base structure, and extending in a first direction, the first conductive structure including lower layers, and at least one among the lower layers including carbon, and a data storage pattern disposed on the first conductive structure. The semiconductor device further includes an intermediate conductive pattern disposed on the data storage pattern, and including intermediate layers, at least one among the intermediate layers including carbon, a switching pattern disposed on the intermediate conductive pattern, and a switching upper electrode pattern disposed on the switching pattern, and including carbon. The semiconductor device further includes a second conductive structure disposed on the switching upper electrode pattern, and extending in a second direction intersecting the first direction, and a hole spacer disposed on a side surface of the data storage pattern.

Semiconductor device including data storage material pattern

Growing community of inventors

Hwaseong-si, South Korea

Jungmoo Lee