Semes Co., Ltd.

Jungmo Gu

Jong Hwan An

Shin-Woo Nam

Jamyung Gu

Jun Ho Lee

Saewon Na

The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit disposed in the process chamber to support a substrate, a gas supply unit configured to supply a process gas into the process chamber, and a plasma generating unit configured to generate plasma from the process gas. The plasma generating unit includes an upper electrode disposed on the substrate, a lower electrode disposed under the substrate to be vertically opposite to the upper electrode, and three high frequency power sources configured to apply high frequency power to the lower electrode. The three high frequency power sources include a first frequency power source and a second frequency power source having frequencies of 10 MHz or less, and a third frequency power source having a frequency of 10 MHz or more.

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Gyeonggi-do, South Korea

Jungmo Gu