Applied Materials, Inc.

Apple Inc.

Jungmin Lee

Dieter Haas

Si Kyoung Kim

Chung-Chia Chen

Ji-Young Choung

Yu Hsin Lin

Ji Young Choung

Yu-hsin Lin

Seong Ho Yoo

Takuji Kato

Wen-Hao Wu

Jinkwang Kim

Chung-chia Chen

Yu-Hsin Lin

Yusin Lin

Cheng Kai Chen

Rui Liu

ChoongHo Lee

Stefan Keller

Takashi Anjiki

John Z Zhong

Shih Chang Chang

Chin-Wei Lin

Chun-Yao Huang

Sunggu Kang

Lei Yuan

Graham Butler Myhre

Andrew C Lin

Enkhamgalan Dorjgotov

James E Pedder

Steven E Molesa

Bhadrinarayana Lalgudi Visweswaran

Meng-Huan Ho

Ivan Knez

Minhyuk Choi

Giovanni Carbone

Cheuk Chi Lo

Donghee Nam

Chun-Ming Tang

Michael Slootsky

Jaein Choi

Gloria Wong

Hairong Tang

Hitoshi Yamamoto

Kwang Ohk Cheon

Wendi Chang

KiBeom Kim

Soojin Park

Sarfaraz Moh

EnkhAmgalan Dorjgotov

Andrew H Lin

Cheng Chen

Rni Liu

Embodiments described herein generally relate to a display. In one or more embodiments, a sub-pixel circuit includes at least two anodes disposed over a substrate, with adjacent anodes defining a well. The sub-pixel circuit further includes adjacent overhang structures. The overhang structures include a first portion disposed in the well and a second portion disposed over the first portion, and a portion of the uppermost surface of the anode. The second portion includes overhang extensions extending past lower sidewalls of the first portion, and an upper surface. The upper surface of the second portion is above the uppermost surface of the anodes. The well has a trench area defined by the lower sidewalls and a bottom surface of the overhang extensions with a gap between the overhang extensions of the adjacent overhang structures.

High resolution advanced OLED sub-pixel circuit

Methods and apparatus for forming organic light emitting diode (OLED) structures disposed on a substrate are provided. In one embodiment, a method for forming an organic light emitting diode (OLED) substrate is provided that includes forming a first conductive layer on a substrate in a first direction, forming a dielectric layer on a portion of the first conductive layer, wherein the dielectric layer includes a well having a portion of the first conductive layer exposed, depositing an organic material into the well and on the dielectric layer continuously in the second direction and between the two bus bars, and forming a second conductive layer on the organic material continuously in a second direction orthogonal to the first direction and between two bus bars, wherein the second conductive layer is in direct contact with the bus bars on opposing sides thereof; and depositing an encapsulating layer on the second conductive layer continuously in the second direction and fully cover the second conductive layer.

Organic light emitting diode display structures and methods of forming

Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The overhang structures are permanent to the sub-pixel circuit. The overhang structures include a conductive oxide. A first configuration of the overhang structures includes a base portion and a top portion with the top portion disposed on the base portion. In a first sub-configuration, the base portion includes the conductive oxide of at least one of a TCO material or a TMO material. In a second sub-configuration, the base portion includes a metal alloy material and the conductive oxide of a metal oxide surface. A second configuration of the overhang structures includes the base portion and the top portion with a body portion disposed between the base portion and the top portion. The body portion includes the metal alloy body and the metal oxide surface.

Conductive oxide overhang structures for OLED devices

Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed on the PDL structures, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material. The device is made by a process including the steps of: depositing the OLED material and the cathode by evaporation deposition, and depositing an encapsulation layer disposed over the cathode.

Methods of fabricating OLED panel with inorganic pixel encapsulating barrier

Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The sub-pixel circuit includes a plurality of contact overhangs. The plurality of contact overhangs are disposed between adjacent sub-pixels of a sub-pixel circuit to be formed. The contact overhangs are formed over a metal grid exposed through a PDL structure. A cathode is deposited via evaporation deposition to be in contact with the contact overhang. The metal grid is perpendicular to a plurality of metal layers disposed on the substrate.

Quasi global cathode contact method for advanced patterning

Embodiments described herein generally relate to a display. In one or more embodiments, a sub-pixel circuit includes at least two anodes disposed over a substrate. Adjacent anodes define a well. Adjacent overhang structures are disposed in the well. The overhang structures have an overhang thickness from the substrate to an upper surface of the overhang structures. The overhang thickness and the anode thickness are substantially equivalent. The overhang structures include overhang extensions extending past lower sidewalls. The well has a trench area defined by the lower sidewalls and a bottom surface of the overhang extensions, with a gap between the overhang extensions of the adjacent overhang structures. An organic light emitting diode (OLED) material is disposed over the anode, the upper surface of the overhang structures, under the overhang structures, and within the trench area. A cathode is disposed over the OLED material.

High resolution advanced OLED sub-pixel circuit and patterning method

Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed on and extending laterally past a base structure disposed on the PDL structure. Each second overhang is defined by a top structure disposed on and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed on the HIL material and extends under the first overhang.

OLED panel with advanced sub-pixel overhangs

Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

Descending etching resistance in advanced substrate patterning

Exemplary methods of OLED device processing are described. The methods may include forming an anode on a substrate. Forming the anode may include forming a first metal oxide material on the substrate, forming a metal layer over the first metal oxide material, forming a protective barrier over the metal layer, and forming a second metal oxide material over the amorphous protection material. The protective barrier may be an amorphous protection material overlying the metal layer.

OLED anode structures including amorphous transparent conducting oxides and OLED processing method comprising the same

OLED panel with inorganic pixel encapsulating barrier

Embodiments described herein relate to a sub-pixel. The sub-pixel includes an anode, overhang structures, separation structures, an organic light emitting diode (OLED) material, and a cathode. The anode is defined by adjacent first pixel isolation structures (PIS) and adjacent second PIS. The overhang structures are disposed on the first PIS. The overhang structures include a second structure disposed over the first structure and an intermediate structure disposed between the second structure and the first structure. A bottom surface of the second structure extends laterally past an upper surface of the first structure. The first structure is disposed over the first PIS. Separation structures are disposed over the second PIS. The OLED material is disposed over the anode and an upper surface of the separation structures. The cathode disposed over the OLED material and an upper surface of the separation structures.

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Cupertino, CA, United States of America

Jungmin Lee