Samsung Electronics Co., Ltd.

Jungim Choe

Kook Tae Kim

Dongmo Im

Miseon Park

Soojin Hong

Chang Kyu Lee

Ju-eun Kim

An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench; and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.

Growing community of inventors

Hwaseong-si, South Korea

Jungim Choe