Samsung Electronics Co., Ltd.

Junghwan Ryu

Youngjin Cho

Hee Hyun Nam

Hyo-Deok Shin

An operational method of a memory module is provided. The method includes receiving, from an external of the memory module, a first command and a first address in synchronization with clock signals. Status information is output through a signal line, when first data corresponding the first address is available in a data buffer in response to the first command. A second command in synchronization with the clock signals after the transmitting the status information is received from the external of the memory module, a second command. In response to the second command, the first data being available in the data buffer is output through data lines.

Methods of operating mixed device type memory modules, and processors and systems configured for operating the same

A method of operating a memory module can include receiving, at the memory module, an active command and an associated row address that indicates that the active command is directed to a volatile memory device included in the memory module or to a non-volatile memory device included in the memory module. The volatile memory device or the non-volatile memory device can be activated based on the associated row address in response to the active command. Status information can be provided at the memory module indicating readiness of the memory module for receipt of an operation command associated with the active command and the associated row address.

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Suwon-si, South Korea

Junghwan Ryu