Samsung Electronics Co., Ltd.

Postech Academy-industry Foundation

Junghwa Lee

Sukgi Hong

Byungjin Choi

Donghee Yeon

Jinsu Ha

Byoungwoo Kang

Chanho Kim

Pansuk Kwak

Kyunghwa Yun

A composite positive active material represented by Formula 1,LiNiCOMnMO  Formula 1wherein, in Formula 1, M is zirconium (Zr), aluminum (Al), rhenium (Re), vanadium (V), chromium (Cr), iron (Fe), gallium (Ga), silicon (Si), boron (B), ruthenium (Ru), titanium (Ti), niobium (Nb), molybdenum (Mo), magnesium (Mg), or platinum (Pt), 1.1≤a≤1.3, b+c+d+e≤1, 0≤b≤0.3, 0≤c≤0.3, 0<d≤0.6, and 0≤e≤0.1, wherein, through atomic interdiffusion of lithium and the metal, the composite positive active material has a uniform distribution of lithium excess regions and a uniform degree of disorder of metal cations, and the metal cations have a disordered, irregular arrangement at an atomic scale. Also a method of preparing the composite positive active material, a positive electrode including the composite positive active material, and a lithium battery including the positive electrode.

Composite positive electrode active material, method of preparing the same, positive electrode including composite positive electrode active material,and lithium battery including positive electrode

A composite positive active material represented by Formula 1,LiNiCoMnMO&#x2003;&#x2003;Formula 1

Composite positive electrode active material, method of preparing the same, positive electrode including composite positive electrode active material, and lithium battery including positive electrode

A semiconductor memory device includes a substrate having a cell array region and a contact region, a stack structure including a plurality of gate electrodes on the cell array region and the contact region, a plurality of cell vertical channel structures extending through the stack structure on the cell array region, and a contact structure disposed beside of the stack structure on a top surface of the substrate and disposed along a line extending from the cell array region toward the contact region. The height of the contact structure on the cell array region is different from the height of the contact structure on the contact region.

Semiconductor memory device

Growing community of inventors

Pohang-si, South Korea

Junghwa Lee