Samsung Electronics Co., Ltd.

Soulbrain Co., Ltd.

Techno Semichem Co., Ltd.

Junghun Lim

Seonghwan Park

Hoon Hee Han

Kyounghwan Kim

Kyunghyun Kim

Yongsun Ko

Jihoon Jeong

Daehong Eom

Sang Won Bae

Se-Ho Cha

Jinuk Lee

ChangSup Mun

Jaewan Park

Byoungmoon Yoon

Chanjin Jeong

Yanghwa Lee

Young-taek Hong

Young Taek Hong

Jaesung Lee

Jung-Min Oh

Yongtae Kim

Hyosan Lee

Soojin Kim

Hayoung Jeon

Jungmin Oh

Ahn-Ho Lee

Seunghyun Ahn

Baiksoon Choi

Changjun Park

Sangwon Bae

Seungmin Jeon

Hyuntak Kim

Byungil Lee

An etchant composition for etching a silicon germanium film includes, based on a total weight of the etchant composition, about 5 wt % to about 14 wt % of an oxidant, about 0.01 wt % to about 5 wt % of a fluorine compound, about 0.01 wt % to about 5 wt % of an amine compound, about 0.01 wt % to about 1 wt % of an alcohol compound having a hydrophilic head and a hydrophobic tail, about 60 wt % to about 90 wt % of an organic solvent, and a balance of water. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a structure in which a plurality of silicon films and a plurality of silicon germanium films are alternately stacked; and selectively removing the plurality of silicon germanium films by using the etchant composition.

Etchant composition for etching silicon germanium film and method of manufacturing integrated circuit device by using the same

Provided are an etching composition and a method for manufacturing a semiconductor device using the same. According to embodiments, the etching composition may comprise from about 15 wt % to about 75 wt % of peracetic acid; a fluorine compound; an amine compound; and an organic solvent.

Etching composition and method for manufacturing semiconductor device using the same

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Compositions for etching

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Compositions for etching and methods of forming a semiconductor device using the same

A photosensitive-resin remover composition includes an amine compound and de-ionized water, an amount of the de-ionized water being about 45% to about 99% by weight based on a total weight of the composition.

Photosensitive-resin remover composition and method of fabricating semiconductor device using the same

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Daejeon, South Korea

Junghun Lim