Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Samsung Display Co., Ltd.

Lg Display Co., Ltd.

Industry-university Cooperation Foundation Hanyang University

Junghoon Kim

Byoungkwon Cho

Jiyoon Park

Hyunwoo Cho

Mihee Heo

Jihoon Kim

Sungho Lee

Tae-Eun Kim

Jeungsoo Kim

Yumin Jung

Changseo Park

Sunghyun Hwang

Sojeong Park

Jaehyung Lee

Seungjoon Lee

Sun Choi

Mijin Jung

Sungoh Kim

Jungeun Lee

Sanghyuk Son

Jungwoo Lee

Seonghun Kim

Bongchu Shim

Byungjun Kang

Dong Wook Shin

Jinyoung Choi

Wonseok Song

Youngmin Lee

Chilkeun Park

Kyongtae Park

Jiyoon Lee

Jin-gyu Seo

Youngsik Lee

Daekyu Shin

Taegon Kim

Dohee Kim

Jaemyung Lee

Yunsik Kim

Sungwoo Sul

Jaemin Hong

Heeyoub Kang

Hongsuk Choi

Hyuntae Kim

Taehwa Hong

Sangyuk Son

Kwangyong Lim

Dongyoon So

Dongok Kwak

Jongsung Na

Kwangil Shin

Minsu Son

Won-hwa Lee

Dongsoo Moon

Hongkug Kim

Pilseon Ji

Hyunho Choi

Doogie Lee

Chulho Kim

Jonghwa Yim

Hanul Kwen

Doyoung Yoon

Namyeong Heo

Suhyung Kim

Chorong Park

Chungil Kim

Juhyup Yoon

Jonghyun Shin

Joonyoung Oh

Soyeon Heo

Jae-Woo Jeong

Seona Cho

Ilsuk Park

Hanyoung Kim

Younghoon Roh

Wooyoung Jung

ByoungHee Kim

Sungwoo Song

Yoochul Sung

Yeonock Ha

Soonchul Hwang

Minu Son

Jaebum Byun

Su-Hyun Cha

Seongchan Han

Chunu Han

Sangyoul Yoon

S M Zahid Ishraque

Soohan Kim

Jeonghun Park

Donghyouck Lee

Jongdo Park

Seungwon Han

Hyunsik Yu

Yeongjune Won

Heungsu Jeon

Hojin Ahn

Jihun You

Yeni Jang

Woosup Kim

Cheolgyu Jeong

A display device, according to an embodiment of the present invention, comprises a semiconductor light-emitting element, the semiconductor light-emitting element comprising: a first conductive electrode; an undoped semiconductor layer formed on the first conductive electrode; a first conductive semiconductor layer formed on the undoped semiconductor layer; an active layer formed on the first conductive semiconductor layer; a second conductive semiconductor layer formed on the active layer; and a second conductive electrode formed on the second conductive semiconductor layer; wherein the first conductive electrode is formed to cover a part of a side surface of the first conductive semiconductor layer.

Display device using semiconductor light-emitting element and manufacturing method thereof

The present invention relates to a method for manufacturing a display device, and more particularly, to a method for manufacturing a display device using a semiconductor light emitting device having a size of several μm to several tens of μm, and to an assembly substrate used for manufacturing the display device. The present invention provides a display device, characterized in that including a substrate having a wiring electrode, a plurality of semiconductor light emitting devices electrically connected to the wiring electrode, and a passivation layer formed to cover the semiconductor light emitting device, and the passivation layer is formed to cover only a portion of a side surface of the semiconductor light emitting device.

Display device using semiconductor light emitting elements, and method for manufacturing same

A storage system includes a host device including a file system configured to set a plurality of block expiration times respectively corresponding to a plurality of data blocks included in a file, and a storage device configured to store data according to control of the host device. The storage device includes a nonvolatile memory device configured to store the plurality of data blocks provided from the host device, a storage timer configured to provide a count value by counting time, and a data deletion manager. The data deletion manager generates a data deletion information table including a plurality of block deletion times based on the plurality of block expiration times provided from the host device. The data deletion manager deletes each data block of the plurality of data blocks stored in the nonvolatile memory device based on the data deletion information table and the count value.

Storage system and method of data management of the same

The present specification provides a semiconductor light emitting element having a new structure with a wider light emitting area than a conventional structure, when implementing a display device by using semiconductor light emitting elements. A semiconductor light emitting element according to one embodiment of the present invention is characterized by comprising: a first conductive-type semiconductor layer having a first side inclination angle; a second conductive-type semiconductor layer having a second side inclination angle, which is positioned on the first conductive-type semiconductor layer; and an active layer having a third side inclination angle, which is disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, wherein the second side inclination angle and the third side inclination angle are the same.

Display device using micro LED and method for manufacturing same

The present specification provides a display device using a semiconductor light emitting element that self-assembles in a fluid, and a method for manufacturing same. The semiconductor light emitting element is a horizontal semiconductor light emitting element, and has a plurality of mesa structures on one surface thereof to enable unidirectional assembly in a fluid. Further, a transparent electrode layer can be formed on the one surface including the mesa structures to improve luminous efficiency.

Display device using micro LED and method of manufacturing same

An electronic device, according to various embodiments, comprises: a battery connecting circuit; a charging circuit for supplying power supplied from an external electronic device to a component and battery of the electronic device; and a processor. The processor may be configured to: in a first state in which the electronic device of which the battery is not connected to the battery connecting circuit receives power from the external electronic device, measure the voltage of the battery when it is confirmed that the battery is connected to the battery connecting circuit; and after confirming the capacity of the battery on the basis of the measured voltage, switch to a second state in which the charging circuit supplies power from the external electronic device to the battery connected to the battery connecting circuit. Various other embodiments may be provided.

Electronic device and method for measuring voltage of battery in electronic device

A method of manufacturing a display device according to the present invention involves assembling a semiconductor light emitting element to an assembly substrate and then transferring the same to a wiring substrate, wherein, during self-assembly using magnetic and electric fields, the semiconductor light emitting element is fixed to the assembly substrate by forming a covalent bond between the semiconductor light emitting element and the assembly substrate so that the semiconductor light emitting element does not become separated from the assembly substrate, and when transferring the assembled object to the wiring substrate, the formed covalent bond is broken down so that the semiconductor light emitting element can be easily detached from the assembly substrate.

Method of manufacturing display device using semiconductor light emitting element

Discussed is a display device including a base part; a plurality of assembly electrodes disposed on the base part and having a first electrode and a second electrode that generate an electric field when power is applied; a dielectric layer disposed to cover the plurality of assembly electrodes; and a plurality of semiconductor light emitting devices disposed on a surface of the dielectric layer, wherein one surface of the plurality of semiconductor light emitting devices facing the dielectric layer and one surface of the dielectric layer facing the plurality of semiconductor light emitting devices respectively comprise a concave-convex structure.

Display device using micro led

Discussed is a display device including: a base part; a plurality of assembly electrodes extending in a first direction and disposed at predetermined intervals on the base part; a dielectric layer stacked on the base part to cover the plurality of assembly electrodes; a barrier wall portion stacked on the dielectric layer to define a cell overlapping at least a portion of the plurality of assembly electrodes along the first direction of the plurality of assembly electrode; and a plurality of semiconductor light emitting devices disposed in the cell, wherein the plurality of semiconductor light emitting devices comprise a magnetic layer extending in a longitudinal direction that intersects the first direction.

Display device using semiconductor light emitting diode

A substrate inspection method includes: (i) acquiring a plurality of defect of interest (DOI) images of a substrate having a DOI, under a corresponding plurality of different optical conditions, (ii) acquiring a plurality of DOI difference images from differences between the plurality of DOI images and a reference image, and (iii) acquiring a plurality of DOI difference-of-difference (DOD) images from differences between the plurality of DOI difference images. The method also includes setting two optical conditions corresponding to a DOI DOD image having the highest signal-to-noise ratio (SNR) among the plurality of DOI DOD images, as a first optical condition and a second optical condition, and acquiring a first image of the substrate under the first optical condition and a second image of the substrate under the second optical condition. A first difference image is also acquired, which is a difference between the first image and the reference image, and a second difference image is acquired, which is a difference between the second image and the reference image. A DOD image is acquired that is a difference between the first difference image and the second difference image. A low-SNR defect candidate region is then detected from the first difference image, the second difference image, and the DOD image.

Substrate inspection method and device

A method includes recognizing a face in a plurality of preview images. The method also includes setting a first exposure value of a first image such that a first brightness falls within a specified brightness range and the first brightness is of a first area including the face. The method further includes extracting a second brightness of an area excluding the first area. When the difference between the first brightness and the second brightness is greater than or equal to a specified value, the method includes adjusting exposure values of second and third images, which are a plurality of bracketing images having different exposures, as second and third exposure values, respectively. Additionally, the method includes synthesizing at least one of a bracketing image having a first exposure value, a second image, or a third image to generate a high dynamic range (HDR) image. The method includes displaying the HDR image.

Electronic device for adjusting exposure value of image including face

An operation method of an electronic device is provided. The method includes generating a first bokeh image by blurring a part of an image acquired using at least one of a first camera module or a second camera module, by using a distance value determined based on the first camera module and the second camera module, and identifying whether a designated subject is included in the acquired image by using at least one of the first camera module or the second camera module; and in response to identifying that the designated subject is included, deactivating the second camera module, performing image segmentation on the acquired image by using the first camera module, and generating a second bokeh image by blurring a part of the acquired image, based on a result of the image segmentation.

Electronic device and method for generating an image

A display device includes a semiconductor light emitting device disposed on a substrate and having a first conductive electrode disposed on a first upper portion of the semiconductor light emitting device and a second conductive electrode disposed on a second upper portion of the semiconductor light emitting device, a passivation layer disposed on the semiconductor light emitting device, a first electrode electrically connected to the first conductive electrode, and a second electrode electrically connected to the second conductive electrode. A part of the second electrode overlaps with a part of the first conductive electrode with the passivation layer interposed therebetween.

Display device using semiconductor light emitting device surrounded by conductive electrode and method for manufacturing the same

A semiconductor light emitting element can include an n-type semiconductor layer, a p-type semiconductor layer in a first region on the n-type semiconductor layer, a p-type electrode on the p-type semiconductor layer, an n-type electrode in a second region different from the first region on the n-type semiconductor layer, a magnetic layer under the n-type semiconductor layer, a reflective layer between the n-type semiconductor layer and the magnetic layer, and a passivation layer surrounding the n-type semiconductor layer, the p-type semiconductor layer, the p-type electrode, the n-type electrode, and the magnetic layer.

Semiconductor light emitting element with magnetic layer, manufacturing method thereof, and display device including the same

A storage device includes; a nonvolatile storage including a first region and a second region, a storage controller controlling operation of the nonvolatile storage, and a buffer memory connected to the storage controller. The storage controller stores user data received from a host device in the second region, stores metadata associated with management of the user data and generated by a file system of the host device in the first region, loads the metadata from the first region to the buffer memory in response to address information for an index node (inode) associated with the metadata, and accesses the target data in the second region using the metadata loaded to the buffer memory.

Storage device that receives inode address information to reduce external communication overhead

Growing community of inventors

Seoul, South Korea

Junghoon Kim