Lg Electronics Inc.

Trina Solar Co., Ltd.

Junghoon Choi

Heonmin Lee

Kwangsun Ji

Hyunjung Park

Hyunjin Yang

Hojung Syn

Wonseok Choi

Youngsung Yang

Hyungjin Kwon

Chungyi Kim

Jaewon Chang

Youngjoo Eo

Kyungjin Shim

Changseo Park

Sehwon Ahn

Sunho Kim

Minho Choi

Youngho Choe

Minpyo Kim

Goohwan Shim

Jinhyoun Joe

Hayan Baek

Jin Hyoun Joe

A method for manufacturing a solar cell, includes providing a silicon substrate, forming an oxide layer on a first surface of the silicon substrate, forming a doped polycrystalline silicon layer on the oxide layer, forming a passivation layer on the doped polycrystalline silicon layer, printing a metal paste on the passivation layer, and forming a metal contact connected to the doped polycrystalline silicon layer by firing the metal paste to penetrate the passivation layer.

Solar cell

A solar cell includes a silicon substrate, an emitter area formed on a front surface of the silicon substrate, a tunneling oxide layer formed on a back surface of the silicon substrate, a back surface field area formed on the tunneling oxide layer and formed of a polycrystalline silicon layer, a back passivation film formed on the back surface field area and having an opening, and a back electrode connected to the back surface field area via the opening.

A bi-facial solar cell includes a silicon substrate, a first doped region formed on a front surface of the silicon substrate, an oxide layer formed on a back surface of the silicon substrate, a second doped region formed on the oxide layer and formed of a polycrystalline silicon layer, a first passivation layer formed on the first doped region, a first anti-reflection layer formed on the first passivation layer, a plurality of first finger electrodes connected to the first doped region through a first opening in the first passivation layer and the first anti-reflection layer, a second passivation layer formed on the second doped region, a second anti-reflection layer formed on the second passivation layer, and a plurality of second finger electrodes connected to the second doped region through a second opening in the second passivation layer and the second anti-reflection layer.

A solar cell panel can include a solar cell; a sealing member for sealing the solar cell; a first cover member disposed on the sealing member at one side of the solar cell; and a second cover member disposed on the sealing member at another side of the solar cell, in which the first cover member includes a base member and a colored portion having a light transmittance lower than a light transmittance of the base member, the first cover member constituting a colored area, and the colored portion includes at least two layers each formed of an oxide ceramic composition and having different colors or different light transmittances.

Solar cell panel

Discussed is a solar cell including a semiconductor substrate, a first tunneling layer entirely formed over a surface of the semiconductor substrate, a first conductive type area disposed on the surface of the semiconductor substrate, and an electrode including a first electrode connected to the first conductive type area.

A solar cell panel includes a solar cell; a sealing member for sealing the solar cell; a first cover member positioned at a first surface of the solar cell on a first side of the sealing member; and a second cover member positioned at a second surface of the solar cell on a second side of the sealing member. The first cover member includes a base member and a colored portion having a lower light transmittance than the base member and partially formed on the base member to form a colored region. The second cover member includes a cover portion having a lower brightness than the colored portion and positioned at least an inactive region where the solar cell is not positioned.

A method for manufacturing a solar cell, the method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer includes depositing a semiconductor material; forming a capping layer on the semiconductor layer; and forming an electrode connected to the semiconductor layer, wherein the tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure, wherein a pressure of the forming of the semiconductor layer is smaller than the pressure of the forming of the tunneling layer, wherein the forming of the semiconductor layer further comprises doping the semiconductor layer with dopants, and wherein the capping layer is formed between the forming of the semiconductor layer and the forming of the electrode.

Solar cell and method for manufacturing the same

A solar cell includes a semiconductor substrate, a tunneling layer on one surface of the semiconductor substrate, a first conductive type area on the tunneling layer, a second conductive type area on the tunneling layer such that the second conductive type area is separated from the first conductive type area, and a barrier area interposed between the first conductive type area and the second conductive type area such that the barrier area separates the first conductive type area from the second conductive type area.

Discussed is a solar cell including a semiconductor substrate, a tunneling layer formed on one surface of the semiconductor substrate, a first conductive semiconductor layer formed on a surface of the tunneling layer and a second conductive semiconductor layer formed on the surface the tunneling layer. A separation portion separates the first and second conductive semiconductor layers from each other, and is formed on the surface of the tunneling layer at a location corresponding to at least a portion of a boundary between the first and second conductive semiconductor layers.

Discussed is a method of manufacturing a solar cell including preparing a single crystalline silicon substrate having a first conductive type impurity; forming a non-single crystalline silicon emitter layer having a second conductive type impurity opposite to the first conductive type impurity on a first surface of the single crystalline silicon substrate; forming a first transparent conductive oxide layer on the first surface of the single crystalline silicon substrate; forming a first electrode electrically connected to the first transparent conductive oxide layer; and forming a second electrode electrically connected to the single crystalline silicon substrate, wherein the forming of the first electrode includes; forming a first seed layer on the first transparent conductive oxide layer, and forming a first plating layer over the first seed layer by plating a first conductive material.

Solar cell and method of manufacturing the same

Discussed is a solar cell including a semiconductor substrate including a base area and a doping area, a doping layer formed on the semiconductor substrate, the doping layer having a conductive type different from the doping area, a tunneling layer interposed between the doping layer and the semiconductor substrate, a first electrode connected to the doping area, and a second electrode connected to the doping layer.

A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be separated from the emitter region, a first electrode electrically connected to the emitter region, a second electrode electrically connected to the first field region, and an insulating region positioned on at least one of the emitter region and the first field region.

A method of manufacturing a solar cell, the method includes forming a protective film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon, wherein the forming of the protective film includes a heat treatment process performed at a heat treatment temperature of approximately 600 degrees Celsius or more under a gas atmosphere including nitrogen, and wherein the heat treatment process includes: a main section, during which the heat treatment temperature is maintained, a temperature increase section before the main section, during which an increase in temperature occurs from an introduction temperature to the heat treatment temperature, and a temperature reduction section after the main section, during which a decrease in temperature occurs from the heat treatment temperature to a discharge temperature.

Method of manufacturing solar cell

Discussed is a method for manufacturing a solar cell. The method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer including depositing a semiconductor material; and forming an electrode connected to the semiconductor layer. The tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure.

A solar cell includes a substrate containing a first impurity of a first conductivity type and made of a crystalline semiconductor, an emitter region positioned on the substrate and containing a second impurity of a second conductivity type different from the first conductivity type, the emitter region being made of a non-crystalline semiconductor, a surface field region positioned on the substrate and containing a third impurity of the first conductivity type, the surface field region being made of non-crystalline semiconductor, a first electrode connected to the emitter region, and a second electrode connected to the surface field region, wherein at least one of the emitter region and the surface field region is made of amorphous metal silicide containing a metal material.

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Seoul, South Korea

Junghoon Choi