Samsung Electronics Co., Ltd.

Jungho Yun

Wonchul Lee

Dawoon Jung

Youngil Seo

Sangwoo Kim

Min-Chul Kim

Jeong-Eun Kim

Seungho Song

Taehyung Kwon

A storage device includes a memory device and a solid state drive used as a cache memory for the memory device. The solid state drive includes a storage unit including a plurality of nonvolatile memory cells, a memory controller configured to control the storage unit, and a data management unit configured to manage pieces of data, stored in the storage unit, in order of less recent access time. The data management unit may set at least one of the pieces of data, stored in the storage unit, as cold data based on a data access point in time, and may send an internal trim command for the cold data to the memory controller when a valid data ratio of the storage unit is higher than a reference valid ratio. The memory controller may perform an internal trim operation on the cold data.

Storage device supporting trim operation and storage system including the same

A recovery method and apparatus for use in a redundant array of independent disks (RAID) storage device is provided that includes a plurality of nonvolatile memory devices. The recovery method includes: reading a data chunk, in which an uncorrectable error occurs, from the plurality of nonvolatile memory devices, selecting a plurality of sub-stripes including a parity and excluding the data chunk, and performing, in parallel, a first recovery operation of adjusting a read level to recover the data chunk and a second recovery operation of processing the plurality of sub-stripes to recover a sub-stripe including the data chunk. The parallel performance of the first and second recovery operations is completed according to an earlier completion of one of the first and second recovery operations.

Method and apparatus for performing data recovery in a raid storage

A memory controller controlling a nonvolatile memory device having a plurality of memory blocks as a data storage space includes an error detection and correction circuit and a reclaim control unit. The error detection and correction circuit receives data from a memory block and calculates a comparison result by comparing a bit error rate of the received data and a predetermined value. The reclaim control unit determines whether or not to perform a read reclaim operation depending on the comparison result and a read voltage used to read the data. The read reclaim operation copies the data to a memory block different from a memory block having stored the data.

Memory controller, method of operating the same and memory system including the same

A memory system comprises a nonvolatile memory comprising a memory block having multiple pages, and a controller configured to control the nonvolatile memory to store data in the memory block according to a command and logical address received from an external source. The controller is configured to determine whether the logical address is currently mapped to a bad page of the memory block by referring to a bad page map, and as a consequence of determining that the logical address corresponds to the bad page, remaps the logical address to a different page and stores dummy data in the bad page.

Memory system performing address mapping according to bad page map

A nonvolatile memory device includes a nonvolatile memory, a buffer memory configured to store a plurality of read data transmitted from the nonvolatile memory, an error detection and correction circuit configured to detect an error in partial data of each of the plurality of read data and judging whether the partial data is correctable or not on the basis of the detected error, and a controller configured to analyze the uncorrectable partial data with respect to the plurality of read data to determine a representative value, and to transmit the representative value to the error detection and correction circuit. The plurality of read data is read through a read operation with respect to a same page.

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Seoul, South Korea

Jungho Yun