Samsung Electronics Co., Ltd.

Yonsei University

JungDae Park

Kihyun Kim

Sooyeon Kim

Dong-Soo Lee

Kwang-Shin Lim

Kyoungsil Park

Yoonmi Lee

Hyeogki Kim

Kwangshin Lim

Dusik Bae

Min Soo Suh

Hyang Bong Lee

Sunghan Jung

Ami Choi

Ji-Won Eom

Kyung-Soo Chae

Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.

Method of processing substrate and method of fabricating semiconductor device using the same

Provided is a method for detecting impurities in ammonium hydroxide. The method for detecting impurities in ammonium hydroxide includes preparing a potassium permanganate solution, preparing ammonium hydroxide, and adding the potassium permanganate solution several times to the ammonium hydroxide so as to detect impurities in the ammonium hydroxide. Potassium permanganate contained in the potassium permanganate solution is added for each time in the range of 0.0001 mol to 0.01 mol per 1 g of ammonia contained in the ammonium hydroxide.

Method for detecting impurities in ammonium hydroxide

A conductivity detector includes a flow channel, an electrode arrangement, and a detector. The flow channel has a tube shape with a channel diameter through which a solution including ion components flows. The electrode arrangement is on the flow channel and includes at least an anode and at least a cathode. The anode and cathode are spaced apart by an electrode gap less than or equal to the channel diameter. The detector is connected to the electrode arrangement to detect electrical conductivity of the ion components.

Conductivity detector and ion chromatography system including the same

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Yongin-si, South Korea

JungDae Park