Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Jungchul Lee

Minhwan Seo

Dohyung Kim

Seongchul Hong

Jaehong Kim

Insung Kim

Sangwoo Bae

Yisung Hwang

Taegyeong Chung

Jinhong Park

Sungho Jang

Junho Yoon

Ingi Kim

Seulgi Lee

Byungmoon Bae

Wondon Joo

Akinori Okubo

Junggeun Shin

Hyunsu Sim

Jiyoung Chu

Kyungsik Kang

Motoshi Sakai

Taehyun Kim

Hyungjin Kim

Jiyoung Kim

Wonhee Lee

Youngjoo Lee

Seungwoo Lee

Jaehwang Jung

Eunhee Jeang

Jinseob Kim

Seungkoo Lee

Gwangsik Park

Sungmin Ahn

Myeongock Ko

Jangwoon Sung

Sangjoon Hong

Sanghoon Yoo

Janghwi Lee

Ono Kazuya

Chul-Kyu Kim

Jaejoon Shim

Kyunghun Han

Chanwoong Na

Ryunmin Heo

Kyungbin Park

An optical apparatus includes a folding mirror configured to direct first and second illumination lights on first and second alignment marks respectively and reflect first and second reflected lights reflected from the first and second alignment marks in different horizontal directions respectively, first and second lenses arranged respectively in optical paths of the first and second reflected lights reflected from the first and second reflective surfaces of the folding mirror, first and second reflection portions configured to reflect the first and second reflected lights passing through the first and second lenses respectively, and a beam splitter prism configured to divide an illumination light incident through a first surface into the first and second illumination lights and direct to the first and second reflection portions, and transmit the first and second reflected lights reflected by the first and second reflection portions through a second surface.

Optical assembly for alignment inspection, optical apparatus including the same, die bonding system and die bonding method using the same

Provided are a level sensor configured to detect a height level of a substrate, and a substrate processing apparatus including the level sensor. The level sensor includes a measurement light source configured to radiate measurement light toward the substrate, a prism configured to split reflected light of the measurement light into first polarized light and second polarized light and generate a first optical path length difference between the first polarized light and the second polarized light, an optical path length modulator configured to keep constant an optical path length of the first polarized light and periodically change an optical path length of the second polarized light, and a detector configured to detect the first optical path length difference based on an interference signal between the first polarized light and the second polarized light.

Level sensor and substrate processing apparatus including the same

Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.

Semiconductor manufacturing apparatus and operating method thereof

Provided is a polarization measuring device including a stage on which a measurement target is provided, a light source assembly configured to emit incident light, a first polarimeter configured to polarize the incident light, a second polarimeter configured to polarize reflected light reflected from the measurement target that is irradiated by the incident light, a filter assembly configured to remove noise from the reflected light, and a detector configured to receive the reflected light and measure an intensity of the reflected light and a phase of the reflected light.

Polarization measuring device and method of fabricating semiconductor device using the same

Provided is a hyperspectral imaging (HSI) apparatus. The HSI apparatus includes: a first slit plate configured to introduce an output beam; a first aspherical mirror configured to reflect the introduced output beam; a first grating having a planar reflective surface, the first grating configured to generate a plurality of first split beams by splitting the output beam after being reflected by the first aspherical mirror; and a first camera configured to detect the plurality of first split beams.

Hyperspectral imaging (HSI) apparatus and inspection apparatus including the same

According to an embodiment of inventive concepts, a substrate dicing method may include forming reformed patterns in a substrate using a laser beam, grinding a bottom surface of the substrate to thin the substrate, and expanding the substrate to divide the substrate into a plurality of semiconductor chips. The forming of the reformed patterns may include forming a first reformed pattern in the substrate and providing an edge focused beam to a region crossing the first reformed pattern to form a second reformed pattern in contact with the first reformed pattern.

Substrate dicing method, method of fabricating semiconductor device, and semiconductor chip fabricated by them

A light source capable of operating third and fourth reflection mirrors included in a beam splitting device in conjunction with movements of first and second reflection mirrors included in a beam transfer device and an optical assembly, respectively. The third and fourth reflection mirrors are disposed on optical paths of a pre-pulse and a main pulse emitted from first and second pulse generators, respectively. The light source operates the third and fourth reflection mirrors to offset an excessive compensation of the main pulse caused in a process of compensating for an optical path error of the pre-pulse. The light source may be included in an extreme ultraviolet light source system.

Light source and extreme ultraviolet light source system using the same

A wafer inspection apparatus includes: an objective lens on an optical path of first and second input beams; and an image sensor configured to generate an image of the wafer based on scattered light according to a nonlinear optical phenomenon based on the first and second input beams, wherein the first input beam passing through the objective lens is obliquely incident on the wafer at a first incident angle with respect to a vertical line that is normal to an upper surface of the wafer, the second input beam passing through the objective lens is incident on the wafer at a second incident angle oblique to the vertical line that is normal to the upper surface of the wafer, and the first and second incident angles are different from each other.

Wafer inspection apparatus and system including the same

A laser beam delivery apparatus of an extreme ultra violet light source may include a high power seed module configured to generate a laser beam, a power amplifier configured to amplify the laser beam generated by the high power seed module, a beam transfer module configured to collect and move the laser beam amplified by the power amplifier, a final focusing assembly optical platform configured to adjust focus of the laser beam collected and moved by the beam transfer module, and a focusing unit configured to focus the laser beam with the focus adjusted by the final focusing assembly optical platform to a target droplet. The power amplifier may include a position adjuster configured to adjust a position of the laser beam. The position adjuster may include a refraction plate having a flat surface. The power amplifier may include a pointing adjuster, which may include a mirror.

Laser beam delivery apparatus for extreme ultra violet light source

An apparatus for bonding semiconductor chips may comprise transfer rails configured to transfer substrates, loading members configured to load the substrates onto the transfer rails, unloading members configured to unload the substrates from the transfer rails, a first wafer supply unit configured to supply a first wafer including semiconductor chips, and/or a bonding unit configured to bond the semiconductor chips to the substrates. An apparatus for bonding semiconductor chips may comprise a transfer rail configured to transfer substrates, loading members configured to load the substrates onto the transfer rail, unloading members configured to unload the substrates from the transfer rail, a buffer member at a side of the transfer rail configured to temporarily receive the substrates loaded by the loading members, a first wafer supply unit configured to supply a first wafer including semiconductor chips, and/or a bonding unit configured to bond the semiconductor chips to the substrates.

Apparatuses for bonding semiconductor chips

A method of forming an electrode, an electrode for a solar cell manufactured, and a solar cell, the method including forming a pattern of a finger electrode by: coating a composition for forming a first electrode that includes a conductive powder, an organic vehicle, and a first glass frit that is free of silver and phosphorus, and drying the coated composition for forming a first electrode; forming a pattern of a bus electrode by: coating a composition for forming a second electrode that includes a conductive powder, an organic vehicle, and a second glass fit that includes silver and phosphorus, and drying the coated composition for forming a second electrode; and firing the resultant patterns.

Method of forming electrode, electrode manufactured therefrom and solar cell

Growing community of inventors

Cheonan-si, South Korea

Jungchul Lee