Samsung Electronics Co., Ltd.

Junga Lee

Yongkwan Lee

Seunghwan Kim

Hyunki Kim

Hyunggil Baek

Jongho Park

Youngmin Lee

Junwoo Park

Jongwan Kim

Jungjoo Kim

Junyoung Oh

Youngja Kim

Yeonsook Kim

Taejun Jeon

Yonghyun Kim

Wooseung Jung

A semiconductor package includes an interposer including an upper pad and an upper passivation layer partially covering the upper pad, a semiconductor chip disposed on the interposer, a conductor pattern disposed on the interposer, a guide pattern disposed on the interposer while including a main opening and at least one sub-opening connected to the main opening, a support disposed on the interposer while including a core portion and a peripheral portion surrounding the core portion, a lower surface of the support being disposed in the main opening of the guide pattern, an upper redistribution structure disposed on the semiconductor chip and connected to the conductor pattern and the guide pattern, and an encapsulant between the interposer and the upper redistribution structure. The encapsulant contacts an inner wall of the main opening, an inner wall of the at least one sub-opening and a side surface of the support.

Semiconductor packages having fixing members

An epitaxial wafer and a semiconductor memory device, the epitaxial wafer including a semiconductor substrate having a front surface and a rear surface opposite to each other; a strain relaxed buffer (SRB) layer on and entirely covering the front surface of the semiconductor substrate; and a multi-stack on and entirely covering a surface of the SRB layer, wherein the SRB layer includes a silicon germanium (SiGe) epitaxial layer including germanium (Ge) at a first concentration of about 2.5 at % to about 18 at %, and the multi-stack has a superlattice structure in which a plurality of silicon (Si) layers and a plurality of SiGe layers are alternately provided.

Epitaxial wafer and semiconductor memory device using the same

An apparatus includes: a vapor generating chamber configured to accommodate a heat transfer fluid and to be filled with saturated vapor generated by the heat transfer fluid; a heater configured to heat the heat transfer fluid in the vapor generating chamber; a substrate stage configured to be movable upward or downward in the vapor generating chamber and to support a substrate on which an electronic device is mounted via a solder. The apparatus also includes at least one mesh plate extending in a horizontal direction in the vapor generating chamber. The at least one mesh plate includes a plurality of openings through which the vapor moves.

Solder reflow apparatus and method of manufacturing an electronic device

A semiconductor package includes a package substrate having a communication hole extending from an upper surface of the package substrate to a lower surface of the package substrate, a semiconductor chip attached to the upper surface of the package substrate, an auxiliary chip attached to the lower surface of the package substrate, external connection terminals attached to the lower surface of the package substrate and spaced apart from the auxiliary chip, and an encapsulant encapsulating the semiconductor chip and the auxiliary chip and filling the communication hole.

Semiconductor package having package substrate

A semiconductor package includes a first package substrate; a first semiconductor chip on the first package substrate; a first conductive connector on the first package substrate; and an interposer including a central portion on the first semiconductor chip and an outer portion having the first conductive connector attached thereto. The central portion of the interposer includes a bottom surface defining a recess from a bottom surface of the outer portion of the interposer in a vertical direction that is perpendicular to a top surface of the first package substrate. A thickness in the vertical direction of the outer portion of the interposer is greater than a thickness in the vertical direction of the central portion of the interposer.

Interposers and semiconductor packages including the same

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Cheonan-si, South Korea

Junga Lee