Samsung Display Co., Ltd.

Jung-Yun Jo

Chaun-Gi Choi

Seung-Ho Jung

Joo-Hee Jeon

Young-Sik Yoon

Sung-Hoon Yang

Jin-Ho Hwang

Ki-Seong Seo

Sang-Wook Lee

Jun-Mo Im

Tae-Young Ahn

Heon-Sik Ha

Kyung-Tea Park

A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base substrate including a pixel area and a transmission area; a pixel circuit on the pixel area of the base substrate; an insulation layer covering the pixel circuit on the base substrate; a pixel electrode selectively disposed on the pixel area of the base substrate, the pixel electrode being electrically connected to the pixel circuit at least partially through the insulation layer; and a transmitting layer structure selectively disposed on the transmission area of the base substrate, the transmitting layer structure including at least an inorganic material, the inorganic material consisting essentially of silicon oxynitride.

Transparent display device and method of manufacturing transparent display devices

Transparent display devices and methods of manufacturing transparent display devices

Transparent display substrates, transparent display devices and methods of manufacturing transparent display devices

A method of manufacturing a display substrate includes forming a gate electrode on a base substrate, forming an active pattern which includes an oxide semiconductor and overlaps with the gate electrode, forming an etch stopper which partially covers the active pattern, and performing a plasma treatment process to promote a reduction reaction to portions of the active pattern exposed by the etch stopper, thereby forming a source electrode and a drain electrode.

Display substrate including a thin film transistor and method of manufacturing the same

A thin film transistor substrate includes an active pattern which is disposed on a base substrate and includes a channel, a source electrode and a drain electrode, the channel which includes an oxide semiconductor, the source electrode and the drain electrode connected the channel, a gate electrode overlapped with the channel, a passivation layer which covers the source electrode, the drain electrode and the gate electrode and a fluorine deposition layer disposed between the active pattern and the passivation layer.

Thin film transistor substrate and method of manufacturing the same

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Yongin-si, South Korea

Jung-Yun Jo