Taiwan Semiconductor Manufacturing Comp. Ltd.

Jung-You Chen

Ming-Da Cheng

Tzy-Kuang Lee

Ching-Hua Kuan

Songbor Lee

Chia-Ming Huang

Hsin-Hung Chen

Wen-Jia Hsieh

Yi-Chun Lo

A method includes depositing a first passivation layer over a conductive feature, wherein the first passivation layer has a first dielectric constant, forming a capacitor over the first passivation layer, and depositing a second passivation layer over the capacitor, wherein the second passivation layer has a second dielectric constant greater than the first dielectric constant. The method further includes forming a redistribution line over and electrically connecting to the capacitor, depositing a third passivation layer over the redistribution line, and forming an Under-Bump-Metallurgy (UBM) penetrating through the third passivation layer to electrically connect to the redistribution line.

Capacitor between two passivation layers with different etching rates

A semiconductor device includes: a gate structure on a substrate; a raised source/drain region adjacent to the gate structure; a channel region under the gate structure; and a protection layer between the substrate and the raised source/drain region. The protection layer is interposed between the substrate and the raised source/drain region. An atom stacking arrangement of the protection layer is different from the substrate and the raised source/drain region.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Hsinchu County, Taiwan

Jung-You Chen