Samsung Electronics Co., Ltd.

Jung-Yoon Ko

Woong Hee Lee

Jung-Geun Jee

Sang-Kyoung Lee

Won-Jun Jang

Ho-Min Son

A non-volatile memory device and a method of fabricating the same are provided. The method can include disposing an isolation layer on a semiconductor substrate. The isolation layer may protrude from the main surface of the semiconductor substrate and define an active region. In a recess defined by the protrusion of the isolation layer and the active region, a diffusion-retarding poly pattern and a floating gate may be formed in sequence. A control gate may be disposed on the isolation layer to cover the diffusion-retarding poly pattern and the floating gate.

Growing community of inventors

Seoul, South Korea

Jung-Yoon Ko