Samsung Electronics Co., Ltd.

Seoul National University

Lg Semicon Co., Ltd.

Jung-Yong Lee

Joung-Yeal Kim

Byoung Lyong Choi

Seong-Cheol Kim

Joon-Ho Na

Yong-Gwon Jeong

Sung-wook Jung

Chae-Il Lim

Jie-kwan Kim

Ju-Suk Bang

A method for predicting a structure of an indoor space using radio propagation channel analysis through deep-learning is disclosed. Channel data of radio signals are collected for various indoor spaces, and radio channel parameter data such as PDP, AoA, and AoD are extracted therefrom. A large amount of propagation channel parameter data is input to an artificial neural network together with vertex coordinate data of the corresponding indoor space and deep-learning is performed in advance. The propagation channel parameter data are extracted from the indoor space to be predicted, the best matching indoor space is detected based on the trained artificial neural network. The best matching indoor space is predicted as the structure of the indoor space.

Method for predicting structure of indoor space using radio propagation channel analysis through deep learning

A memory controller transmits one or more command pairs of a self-refresh entry command and a subsequent self-refresh exit command to a semiconductor memory device during a refresh period. The semiconductor memory device includes a memory cell array including a plurality of memory cell rows each including a plurality of dynamic memory cells, and a refresh control circuit. The refresh control circuit performs a refresh operation on all of the memory cell rows during the refresh period in a self-refresh mode, the self-refresh mode of the refresh period being configured in response to each self-refresh entry command of the one or more command pairs, for each of the one or more command pairs, the memory controller sequentially transmits during the refresh period at least one self-refresh entry command and at least one self-refresh exit command to the semiconductor memory device separated by one or more time gaps.

Semiconductor memory devices, memory systems and refresh methods of the same

A cold cathode electron emission device activating electron emission applying an external electric field is provided, in which an inversion layer inverting the type of a semiconductor layer by an external electric field is generated to form a shallow channel, and an electron beam due to a number of electrons is emitted by an avalanche breakdown in the shallow channel. A single or plurality of active regions are formed in the upper portion of the semiconductor substrate in fabrication and then an inversion layer is formed by the external electric field. The cold cathode electron emission device is driven according to the principle that a number of electrons are emitted by the avalanche breakdown in the inversion layer. Thus, since the high-density electrons are instantaneously emitted at the inversion layer by the external electric field, a preheating is not required. As a result, the cold cathode electron emission device can be applied to a variety of fields such as a cathode ray tube (CRT), a field emission display (FED), a microwave device, an e-beam lithography, a laser and a sensor. Also, when a logic circuit, a signal processing circuit and a memory device are integrated together with the cold cathode electron emission device on a semiconductor substrate, various high efficiency devices and circuits can be fabricated which are light, thin, short and small.

Cold cathode electron emission device for activating electron emission using external electric field

A memory chip having a multiple input/output system enables a memory to have a .times.n, .times.2n or .times.4n I/O system through a simple fuse mask process by using a single memory chip and reduces the consumption of a cell current while having a memory capacity which is the same as in the .times.n or .times.2n I/O system of the conventional art. The multiple input/output memory chip according to the present invention includes a block selecting unit for receiving a source voltage or a column address lowest bit and thereby selectively activating a first block selection signal or a second block selection signal, a column control unit for receiving a source voltage or a column address lowest bit and thereby selectively activating a first column control signal or a second column control signal, a first bank for simultaneously reading or writing n-bit or 2n-bit data in accordance with the first or second column control signal and the first block selection signal, a second bank for simultaneously reading or writing n-bit or 2n-bit data in accordance with the first or second column control signal and the second block selection signal, and a data bus which is connected with first to third fuses and thereby dividable up to four parts.

Memory chip having multiple input/output system

A temperature controlling apparatus adopting a fuzzy adaptation model and a method using the same are provided, in which temperatures of a plurality of positions of a refrigeration compartment are estimated in order to rapidly reach temperature equilibrium of the refrigeration compartment, by considering the operation states of a compressor and a cooling fan which directly affect the temperature of the refrigeration compartment. The temperature controlling apparatus adopting the fuzzy inference includes: a cool air discharge direction controller for controlling the rotation angle of a cool air discharge control blade; and a fuzzy inference unit for inferring peripheral temperatures of temperature sensors by taking the operational states of the cooling fan and the compressor as inputs, in order to provide the cool air discharge direction controller with information with respect to the static angle of the blades of the cool air discharge control blade.

Growing community of inventors

Seoul, South Korea

Jung-Yong Lee