Apple Inc.

Other

Jung Yen Huang

Shinya Ono

Chin-Wei Lin

Shih Chang Chang

Po-Chun Yeh

Jiun-Jye Chang

Ching-Sang Chuang

Chuan-Jung Lin

Lei Yuan

Szu-Hsien Lee

Lun Tsai

Chia-Yu Chen

Rungrot Kitsomboonloha

Doh-Hyoung Lee

Pei-En Chang

Gihoon Choo

Niva A Ran

Zino Lee

Yu-Wen Liu

Chih Pang Chang

Chin Wei Hsu

Akira Matsudaira

Themistoklis Afentakis

Caleb Coburn

Ting-Kuo Chang

Hsin-Hua Hu

Chieh-Wei Chen

Ion Bita

Sunggu Kang

James E Pedder

Hung-Che Ting

Jaein Choi

Hairong Tang

Takahide Ishii

Hassan Edrees

Tsung-Hsiang Shih

Sandeep Chalasani

Chih-Lei Chen

Gwanwoo Park

Hei Kam

Yu Hung Chen

Kai-Chieh Wu

Chung-Wang Lee

Hsing-Chuan Wang

Fu-Yu Teng

Cheng Min Hu

Chih-Hung Yu

Xingfeng He

Yung Fong Kao

Shih Lun Huang

Chang Ming Lu

Sheng Hui Shen

An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk, the display may include active and/or passive leakage-mitigating structures. The passive leakage-mitigating structures may have an undercut that causes discontinuities in the overlying OLED layers. Active leakage-mitigating structures may include a conductive layer (e.g., a conductive ring) that drains leakage current to ground. Alternatively, the active leakage-mitigating structures may include a gate electrode modulator with a variable voltage that stops the current flow laterally.

Organic light-emitting diode display with passive leakage-reducing structures

A display pixel may include an organic light-emitting diode, one or more emission transistors, a drive transistor, a gate setting transistor, a data loading transistor, and an initialization transistor. The drive transistor may be implemented as a semiconducting-oxide transistor to mitigate threshold voltage hysteresis to improve first frame response at high refresh rates, to reduce undesired luminance jumps at low refresh rates, and to reduce image sticking. The gate setting transistor may also be implemented as a semiconducting-oxide transistor to reduce leakage at the gate terminal of the drive transistor. The initialization transistor may also be implemented as a semiconducting-oxide transistor so that it can be controlled using a shared emission signal to reduce routing complexity. The remaining transistors in the pixel may be implemented as p-type silicon transistors. Display pixels configured in this way can support in-pixel threshold voltage compensation and on-bias stress phase to further mitigate the hysteresis.

Electronic display with in-pixel compensation and oxide drive transistors

A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.

Display circuitry with semiconducting oxide transistors

A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated thin-film transistors. The diode may be coupled to drive transistor circuitry, a data loading transistor, and emission transistors. The drive transistor circuitry may include at least two transistor portions connected in series. The data loading transistor has a drain region connected to a data line and a source region connected directly to the drive transistor circuitry. The data line may be connected to and overlap the drain region of the data loading transistor. The data line and the source region of the data loading transistor are non-overlapping to reduce row-to-row crosstalk.

Displays with reduced data line crosstalk

Organic light-emitting diode display with active leakage-reducing structures

An electronic device may include a display with pixels formed using light-emitting diodes, thin-film silicon transistors, thin-film semiconducting-oxide transistors, and capacitors. The silicon transistors, semiconducting-transistors, and capacitors may have control terminals that are coupled to gate or routing lines that extend across the face of the display and that are formed in a low resistance source-drain metal routing layer. Forming routing/gate lines using the low resistance source-drain metal routing layer dramatically reduces the resistance of the gate lines, which enables better timing margins for large display panels operating at higher refresh rates.

Large panel displays with reduced routing line resistance

Micro LED and microdriver chip integration schemes are described. In an embodiment a microdriver chip includes a plurality of trenches formed in a bottom surface of the microdriver chip, with each trench surrounding a conductive stud extending below a bottom surface of the microdriver chip body. Integration schemes are additionally described for providing electrical connection to conductive terminal contacts and micro LEDs bonded to a display substrate and adjacent to a microdriver chip.

Backplane structure and process for microdriver and micro LED

A component such as a display may have a substrate and thin-film circuitry on the substrate. The thin-film circuitry may be used to form an array of pixels for a display or other circuit structures. Metal traces may be formed among dielectric layers in the thin-film circuitry. Metal traces may be provided with insulating protective sidewall structures. The protective sidewall structures may be formed by treating exposed edge surfaces of the metal traces. A metal trace may have multiple layers such as a core metal layer sandwiched between barrier metal layers. The core metal layer may be formed from a metal that is subject to corrosion. The protective sidewall structures may help prevent corrosion in the core metal layer. Surface treatments such as oxidation, nitridation, and other processes may be used in forming the protective sidewall structures.

Electrical components having metal traces with protected sidewalls

The present invention relates to a bicycle freehub having a hub body, an axle and a sprocket coupling. The axle is coaxially disposed in the hub body which has a spindle, two flanges and two ring ends. One of the ring ends has a receiving cavity and the other ring end has a bearing receiving recess. The receiving cavity provides a ratchet ring which has an outer rim and a plurality of ratchets provided along its inner circumference. The sprocket coupling has a cylindrical pawl driver at one end. The pawl driver further provides at least two recesses on its circumference for retaining two pawls thereon respectively and an annular groove along its outer periphery fpr receiving a coil spring to hold the two pawls in position. The sprocket coupling is connected with the hub body by inserting the pawl driver into the receiving cavity coaxially, thus the pawls are engaged with the ratchets for enabling said sprocket coupling to drive the hub body in a direction but is free to rotate in the other direction. A sprocket bearing is held between the sprocket coupling and the ratchet ring. Accordingly, the ratchets of the ratchet ring are more close to the central portion of the hub body than the conventional, so that it reduces the distance of transmitting force and eliminates the damaging shearing force and torque.

Freehub

Growing community of inventors

Zhubei, Taiwan

Jung Yen Huang