Electronics and Telecommunications Research Institute

Jung Wook Lim

Jin Ho Lee

Young Sam Park

Moon Gyu Jang

Sun Jin Yun

Hyun Tak Kim

Kwang Hoon Jung

Jun Kwan Kim

So Hyun Kim

Provided is a method of manufacturing a semiconductor device. The method includes providing a substrate, forming uneven portions in a region of the substrate in which an electrode is to be formed, forming a precursor film formed of a two-dimensional material on the substrate on which the uneven portions are formed, forming a metal chalcogen film by performing a chalcogenation process on the formed precursor film, and forming the electrode on the formed metal chalcogen film.

Semiconductor device and method of manufacturing the same

A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.

Thin film type varistor and a method of manufacturing the same

Provided is a method for forming a gate dielectric layer, in which a plasma oxide layer is finely formed by plasma at a temperature of 200&#xb0; C. or below, and an atomic layer deposition (ALD) oxide layer is deposited. Further, the gate dielectric layer according to the present invention can be applied to a display device comprising a substrate such as a plastic substrate vulnerable to heat, have good interfacial characteristic, and allow a high dielectric layer to be applied thereto.

Method for forming gate dielectric layer

Provided is an inorganic thin film electroluminescent device including a lower electrode, a lower insulating layer, a phosphor, an upper insulating layer, and an upper electrode, and the method for manufacturing the same, whereby it is possible to obtain the inorganic thin film electroluminescent device capable of realizing high brightness, excellent luminescence efficiency, and low breakdown field.

Inorganic thin film electroluminescent device and method for manufacturing the same

The present invention relates to a method of forming a thin film in a semiconductor device. According the method, the thin film is formed by alternately repeating an atomic layer deposition (ALD) method and a plasma enhanced atomic layer deposition (PEALD) method and further by adjusting the ratio of repetition times of the methods, so that it is possible to adjust and estimate the growth rate, density, and material properties such as refraction index, dielectric constant, electric resistance, etc.

Growing community of inventors

Daejon-Shi, South Korea

Jung Wook Lim