Electronics and Telecommunications Research Institute

Jung-Woo Park

Cheon-Soo Kim

Nam Hwang

Hyun-Kyu Yu

Hyun-Kyu Yoo

A beam tracking method and a terminal including the same. The terminal may measure power of a signal received from a base station and determine whether there is a behavior change of the terminal. Further, the terminal may determine whether the signal is blocked using the measured power and the behavior change of the terminal and perform the beam tracking through a secondary beam if it is determined that the signal is blocked.

Beam tracking method at the time of terminal blocking and terminal including the same

A device structure of a LDMOSFET has trench type sinker formed using a trench process. A semiconductor layer of a first conductive type is formed within the device structure. A field area is formed in a trench structure on one side of the semiconductor layer and a gate electrode is formed on a given surface of the semiconductor layer. A channel layer of a second conductive type is formed by laterally diffusion from the field area to a width containing both sides of the gate electrode. The source area of LDMOS is electrically connected with the substrate through the sinker. By a piercing through the source area, the sinker divides the source area into two source areas. This division reduces the parasitic resistance as well as parasitic capacitance. In addition, the device structure eliminates the need for high temperature diffusion process and reduces lateral diffusion of the sinker.

Device structure of RF LDMOS with trench type sinker

A method of forming an HF power device. The method includes forming a semiconductor layer as a first conductive type on a semiconductor substrate; etching the semiconductor layer forming a first trench; doping an impurity in the neighborhood of the first trench forming a first impurity layer; burying a conduction film into the first trench; etching the semiconductor layer forming a second trench; forming a field oxide film buried into the second trench; forming a gate electrode on a surface of the semiconductor layer; forming a source on the surface of the semiconductor layer; forming a drain area on the surface of the semiconductor layer; forming an LLD area on the surface of the semiconductor layer between the drain area and the gate electrode; forming a first metal electrode; and forming a second metal electrode electrically connected to the LDD area.

Growing community of inventors

Taejon, South Korea

Jung-Woo Park