Samsung Electronics Co., Ltd.

Hansol Chemical Co., Ltd.

Hynix Semiconductor Inc.

Samsung Display Co., Ltd.

Skhynix Inc.

Yonsei University

Jung-Woo Park

Si-Young Choi

Jung-Min Ha

Jang-Hyeon Seok

Nam-seog Kim

Chul-Sung Kim

Won-sang Song

Jong-Ryol Ryu

Byeong-Chan Lee

Mi-Ra Park

Ki-Seon Park

Tai-Su Park

Tae-hee Choe

Kyung-won Park

Hyo-Suk Kim

Gil-gwang Lee

Ki-Yeung Mun

Kyu-Hyun Yeom

Eun-Jeong Cho

Kwang-Jin Lee

Kwon Hong

Nam-Seok Roh

Seok-Joon Hong

Yu-Jin Kim

Yu-Jin Lee

Joo-Han Bae

Uk-Rae Cho

Hyung-jun Kim

Hong-Ki Kim

Ja-hum Ku

Tae-Hyung Hwang

Jin-Ki Jung

Uk-rae Cho

Hyoung-sub Kim

Dae-Jin Park

Yong-Jin Yoon

Ki-Hyun Do

Gil-Jae Park

Ming-Sung Park

Jung-Wun Hwang

Jun-Won Lee

Jong-Ryul Yoo

Hyun-Kee Kim

Cheol-Wan Park

Ee-Seul Shin

Tae-Wook Nam

Hyun-Kyung Lee

Jin-Hyung Seo

Jang-Hyun Seok

Jun-Hyuck Kwon

Ju-Won Lee

The present disclosure relates to a novel Group 4 metal element-containing compound having excellent thermal stability, a precursor composition including the compound, and a method for manufacturing a thin film using the precursor composition. The novel Group 4 metal element-containing compound according to the present disclosure and the vapor deposition precursor composition including the compound can have excellent thermal stability, realize thin film deposition in a wide temperature range, and reduce residues caused by heat loss, thereby preventing side reactions in a process. Additionally, the vapor deposition precursor composition according to the present disclosure can realize uniform thin film deposition, thereby securing excellent physical properties of the thin film.

Group 4 metal element-containing compound, precursor composition including same, and method for manufacturing thin film using same

The present disclosure relates to a compound capable of implementing thin film deposition through vapor deposition, and more particularly, to a rare earth compound which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and has excellent thermal stability and reactivity, a rare earth precursor containing the same, a method of preparing the same, and a method of forming a thin film using the same.

Rare earth precursor, method of preparing the same, and method of forming thin film using the same

The present invention relates to a method for producing a high yield of an organometallic compound including a step of allowing a metal hexacarbonyl compound to react with a hexahydro-1,3,5-triazine compound, and a thin film having excellent properties, fabricated by depositing the produced organometallic compound.

Method for producing organometallic compound and thin film fabricated using organometallic compound obtained thereby

The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.

Precursor compounds for atomic layer deposition (ALD) and chemical vapor deposition (CVD) and ALD/CVD process using the same

The present invention relates to a compound that is capable of being used in thin-film deposition using vapor deposition. Particularly, the present invention relates to a rare earth compound, which is capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which has excellent thermal stability and reactivity, a rare earth precursor including the same, a method of manufacturing the same, and a method of forming a thin film using the same.

Rare earth precursor, method of manufacturing same and method of forming thin film using same

The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and more particularly to a novel cobalt precursor, which can be applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and exhibits superior reactivity, volatility and thermal stability, a method of preparing the same and a method of manufacturing a thin film using the same.

Cobalt precursor, method of preparing same and method of manufacturing thin film using same

The present invention relates to a vapor deposition compound which serves to deposit a thin film through vapor deposition. More particularly, the present invention relates to vapor deposition zirconium, titanium, and hafnium precursors which are applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which have low viscosity, excellent thermal stability, and fast self-saturation, and a method of preparing the same.

Precursor for vapor deposition having excellent thermal stability and preparing method thereof

A method for operating of a terminal in a communication system is provided. The method includes receiving first information for cell reselection, reconfiguring an expiration time of a cycle of a timer of the terminal based on the received first information for cell reselection, and determining second information for cell reselection at the reconfigured expiration time of the cycle of the timer of the terminal for cell reselection.

Apparatus and method for controlling cell reselection timer in communication system

A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element.

Semiconductor device and method for fabricating the same

A flat panel display includes; a first substrate, a white reflective layer disposed on the first substrate, a pixel electrode disposed on the white reflective, a second substrate disposed facing the first substrate, a common electrode disposed on the second substrate, and an electrooptic layer disposed between the pixel electrode and the common electrode, wherein the white reflective layer includes at least one of TiOand BaSO.

Flat panel display

A semiconductor device includes an active region including a surface region and a first recess formed below the surface region, the active region extending along a first direction; a device isolation structure provided on an edge of the active region; a gate line traversing over the surface region of the active region along a second direction orthogonal to the first direction; a second recess formed in the device isolation structure to receive a given portion of the gate line into the second recess; a first junction region formed in the active region beneath the first recess and on a first side of the gate line; and a second junction region formed on a second side of the gate line and above the first junction region. The first and second junction regions define a vertical-type channel that extends along lateral and vertical directions.

Semiconductor device having vertical-type channel

Provided is a method of fabricating a non-volatile semiconductor device. The method includes: forming a first hard mask layer over a substrate; etching the first hard mask layer and the substrate to form a plurality of isolation trenches extending in parallel to one another in a first direction; burying a dielectric layer in the isolation trenches to form a isolation layer; forming a plurality of floating gate mask patterns extending in parallel to one another in a second direction intersecting with the first direction over a resulting structure where the isolation layer is formed; etching the first hard mask layer by using the floating gate mask patterns as an etch barrier to form a plurality of island-shaped floating gate electrode trenches; and burying a conductive layer in the floating gate electrode trenches to form a plurality of island-shaped floating gate electrodes.

Method of fabricating non-volatile memory device

A thin film transistor (TFT) array panel with improved contact between the display signal lines and test lines is presented. The TFT array panel includes: gate lines and data lines intersecting each other, switching elements connected to the gate lines and the data lines, and at least one test line disposed near end portions of the gate lines or the data lines. An insulating layer covers the gate lines, the data lines and the switching elements and has first contact holes exposing the end portions of the gate lines or the data lines and second contact holes exposing the test lines. Auxiliary test lines are formed on the insulating layer and commonly connected to conductive layers, wherein the conductive layers connect at least one test line to the gate lines or the data lines via the first and the second contact holes.

Thin film transistor array panel with improved connection to test lines having auxiliary test line with plural extending conductive layers in contact with at least one test line

TFT array panel with improved connection to test lines and with the addition of auxiliary test lines commonly connected to each other through respective conductive layers which connect test lines to respective gate or data lines

A method for fabricating a fine pattern in a semiconductor device includes forming a first photoresist pattern over an etch target layer, forming a first hard mask layer over a substrate structure, planarizing the first hard mask layer to form a first hard mask pattern and expose the first photoresist pattern, removing the first photoresist pattern, forming a second photoresist pattern enclosing the first hard mask pattern, forming a second hard mask layer over the substrate structure, planarizing the second hard mask layer to form a second hard mask pattern and expose the first hard mask pattern, removing the second photoresist pattern, and etching the etch target layer using the first hard mask pattern and the second hard mask pattern.

Method for fabricating fine pattern in semiconductor device

Growing community of inventors

Seoul, South Korea

Jung-Woo Park