Rohm and Haas Electronic Materials Korea Ltd.

Dow Global Technolgoies LLC

Rohm & Haas Electronic Materials LLC

Jung Woo Kim

Phillip Dene Hustad

Cheng-Bai Xu

Cong Liu

Shintaro Yamada

Choong-Bong Lee

Hyun Bae Jeon

Chang-Young Hong

Eui Hyun Ryu

James C Taylor

Myung-Yeol Kim

Min Kyung Jang

Woo-Hyung Lee

Lori Anne Joesten

Kwang-Mo Choi

In one preferred embodiment, polymers are provided that comprise a structure of the following Formula (I): Photoresists that comprises such polymers also are provided.

Monomers, polymers and photoresist compositions

Multiple-pattern forming methods are provided. The methods comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) patternwise exposing the photoresist layer to activating radiation; (d) baking the exposed photoresist layer; (e) contacting the baked photoresist layer with a first developer to form a first resist pattern; (f) treating the first resist pattern with a coating composition comprising an expedient for switching solubility of a sidewall region of the first resist pattern from soluble to insoluble with respect to a second developer that is different from the first developer; and (g) contacting the treated first resist pattern with the second developer to remove portions of the first resist pattern, leaving the solubility-switched sidewall region to form a multiple-pattern. The methods have particular applicability to the semiconductor manufacturing industry for the formation of fine lithographic patterns.

Multiple-pattern forming methods

Growing community of inventors

Kyunggido, South Korea

Jung Woo Kim