Skhynix Inc.

Jung Won Seo

Kang Sik Choi

Jin Ha Kim

Hae Chan Park

Se Ho Lee

Myoung Sub Kim

Seung Yun Lee

Eun Seon Kim

Joo Hyung Bae

Sung Bin Hong

A resistive memory device capable of preventing disturbance is provided. The resistive memory device includes a lower electrode formed on a semiconductor substrate, a variable resistor disposed on the lower electrode, an upper electrode disposed on the variable resistor, and an interlayer insulating layer configured to insulate the variable resistor. The interlayer insulating layer may include an air-gap area in at least a portion thereof.

Resistive memory device capable of preventing disturbance and method for manufacturing the same

A semiconductor device includes a data storage layer formed over a semiconductor substrate in which a lower structure is formed, and an electrode structure formed on at least one side of the data storage layer over the semiconductor substrate. The electrode structure includes a metal pattern, and a graphene pattern formed over the metal pattern.

Semiconductor device with electrode structure including graphene pattern formed over metal pattern

A method of fabricating a semiconductor device includes providing a semiconductor substrate in which a lower structure is formed, forming a phase-change material layer of a first state over the lower structure, transforming an upper region of the phase-change material layer of the first state into a phase-change material layer of a second state having an etch selectivity different from the phase-change material layer of the first state, removing the phase-change material layer of the second state, and forming an upper electrode over the phase-change material layer of the first state in which the phase-change material layer of the second state is removed.

Method of fabricating semiconductor device

Growing community of inventors

Gyeonggi-do, South Korea

Jung Won Seo