Broadcom Corporation

Jung Wang

Akira Ito

Agnes Woo

Liming Tsau

Guang-Jye Shiau

Chao-Yang Lu

Robert Lutze

Voon Yean Ten

Pascal Tran

Robert I Wu

Embodiments described herein provide a structure for finger capacitors, and more specifically metal-oxide-metal ('MOM') finger capacitors and arrays of finger capacitors. A plurality of Shallow Trench Isolation (STI) formations is associated with every other column of capacitor fingers, with poly fill formations covering the STI formations to provide a more robust and efficient structure.

Metal finger capacitor for high-K metal gate processes

According to one exemplary embodiment, a method for monitoring structural integrity of at least one fuse in semiconductor wafer, which includes at least one electrical monitoring structure, includes forming a monitoring window in a dielectric layer overlying the at least one electrical monitoring structure, where the monitoring window and a fuse window overlying the at least one fuse are, in one embodiment, formed in a same etch process. The method further includes performing at least one electrical measurement on the at least one electrical monitoring structure, wherein the at least one electrical measurement is utilized to monitor the structural integrity of the at least one fuse. A change in the at least one electrical measurement is utilized to indicate a change in the structural integrity of the at least one fuse. The at least one electrical monitoring structure can include, for example, a metal serpentine line and one or more metal combs.

Semiconductor die with fuse window and a monitoring window over a structure which indicates fuse integrity

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Laguna Niguel, CA, United States of America

Jung Wang