Massachusetts Institute of Technology

Jung U Yoon

Michael W Geis

Steven Jay Spector

Franz Xaver Kaertner

Theodore M Lyszczarz

Matthew E Grein

Donna M Lennon

Fuwan Gan

Robert T Schulein

A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.

System and method for providing a high frequency response silicon photodetector

Growing community of inventors

Belmont, MA, United States of America

Jung U Yoon