Industrial Technology Research Institute

Tsinghua University

Atomic Energy Council-institute of Nuclear Energy Research

Jung-Tsung Hsu

Jenq-Dar Tsay

Chih-Ming Lai

Wen-Yung Yeh

Chang-Cheng Chuo

Ming-Hsien Wu

Chih-Hung Wu

Wen-Yih Liao

Mu-Tao Chu

Te-Chung Wang

Biing-Jye Lee

Ru-Chin Tu

Shang-Jr Gwo

Jim-Yong Chi

Hon-Way Lin

Rong-Yih Hwang

Wen-Yueh Liu

Pei-Hsuan Wu

I-Liang Chen

Andrew-Yen C Tzeng

Chang-Hong Shen

Ching-En Tsai

Shyi-Ming Pan

Hung-Pin Yang

Huey-Fen Liu

Chih-Hung Chiou

Horng-Nign Chen

Shang-Fu Chen

A method for controlling an alternating current (AC) output of a photovoltaic (PV) device, and an AC PV device are introduced herein. The method includes: receiving solar radiant energy by using a PV cell array and then converting the solar radiant energy into a direct current (DC) energy output; and selecting an arrangement and combination sequence of the PV cells by using a control module, to vary a voltage according to a timing (frequency), so that a sine-like wave output is obtained at an output terminal.

Method for controlling alternating current output of photovoltaic device and alternating current photovoltaic device

A solar cell with a superlattice structure and a fabricating method thereof are provided, which includes fabricating a superlattice structure of GaAsN/GaInAs, GaAsN/GaSbAs, or GaAsN/GaInSbAs between a base and an emitter of a middle cell of a triple junction solar cell by a strain-compensation technology. The provided solar cell not only decreases crystalline defects and increases the critical thickness of the crystal, but also makes the energy bandgap of GaAsN and GaInAs reach around the energy of 1.0 eV (electron volt). Hence, the absorption region can be raised to around the energy of 1.0 eV to enhance the efficiency of the solar cell.

Solar cell with superlattice structure and fabricating method thereof

The invention is directed to a group-III nitride vertical-rods substrate. The group-III vertical-rods substrate comprises a substrate, a buffer layer and a vertical rod layer. The buffer layer is located over the substrate. The vertical rod layer is located on the buffer layer and the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer.

Group-III nitride vertical-rods substrate

A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.

Light emitting diode and fabrication method thereof

A quantum dot/quantum well light emitting diode (LED) is provided with a LED at one side of a substrate, and a second light emitting layer and a third light emitting layer at the other side of the substrate. When a proper forward bias is applied to the LED to emit a first light by the first light emitting layer, the first light is used to excite the second light emitting layer and the third light emitting layer to generate the second light output and the third light output of different colors respectively. Then, the light output of a desired color can be generated by mixing the first light, the second light and the third light.

Quantum dot/quantum well light emitting diode

The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant surface is naturally formed using the properties of the GaN epitaxy. An LED structure is grown on the GaN thick film to form an LED device. This disclosed method and device can simplify the manufacturing process. The invention further uses the GaN thick film epitaxial property to make various kinds of LED chips with multiple slant surfaces and different structures. Since the surface area for emitting light on the chip increases and the multiple slant surfaces reduce the chances of total internal reflections, the light emission efficiency of the invention is much better than the prior art.

Light-emitting diode and the manufacturing method of the same

An LED package assembly comprising two or more light emitting diode dies within an epoxy housing such that a wider light emitting angle with a higher light intensity everywhere around the package including its bottom part is obtained. The LED package can be a substitute for bulb illumination or serving some decorative functions. Furthermore, the LED has low power consumption, a tough body and a long working life. Moreover, a cluster of these LEDs in a large display screen is capable of enhancing clarity of vision and the range of observation from a few meters to a few kilometers away.

Packaging design for light emitting diode

A plastic-molded apparatus for a semiconductor laser is disclosed, which comprise: a first lead having a broad end thereof serving as a mounting plate; a second lead located at one side of the first lead; a third lead located at other side of the first lead; a submount, disposed on a front end of the mounting plate, having a semiconductor laser chip disposed thereon, electrically connected to the second lead, and a monitor detector disposed on the mounting plate closely adjacent to the submount, electrically connected to the third lead, for receiving backward light from the semiconductor laser chip; a plastic-molded header to fix the first lead, the second lead and the third lead; and a transparent cap, adapted to the plastic-molded header, for sealing all components including the laser chip, the monitor detector and peripheral parts on the plastic-molded header.

Plastic-molded apparatus of a semiconductor laser

Growing community of inventors

Hsinchu, Taiwan

Jung-Tsung Hsu