Taiwan Semiconductor Manufacturing Comp. Ltd.

Jung-Ting Chen

Cheng-Yi Peng

Bor-Zen Tien

Chia-Der Chang

Song-Bor Lee

Tai-Yuan Wang

Chih-Hsiung Lin

Chung-Wei Hung

Ying-Hua Lai

Ting Tsai

A semiconductor device, includes a channel region, and a source/drain region adjacent to the channel region. The source/drain region includes a first epitaxial layer, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer, and the first epitaxial layer is made of SiAs.

Semiconductor device and manufacturing method thereof

A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.

Method of fabricating a MOSFET with an undoped channel

Growing community of inventors

Hsinchu County, Taiwan

Jung-Ting Chen