Samsung Electronics Co., Ltd.

Jung-Sup Oh

Tai-Su Park

Si-Young Choi

Yu-Gyun Shin

Dong-Chan Kim

Jong-Ryeol Yoo

Dong-Kyu Lee

Seong-Hoon Jeong

Jong-Hoon Kang

Jeong-Do Ryu

Jin-Hyuk Choi

Sang-Chul Han

Gun-Joong Lee

Jung-Soo An

Young-Dong Lee

Jung-Geun Park

Semiconductor devices, and methods of fabricating the same, include forming device isolation regions in a substrate to define active regions, forming gate trenches in the substrate to expose the active regions and device isolation regions, conformally forming a preliminary gate insulating layer including silicon oxide on the active regions exposed in the grate trenches, nitriding the preliminary gate insulating layer using a radio-frequency bias having a frequency of about 13.56 MHz and power between about 100 W and about 300 W to form a nitrided preliminary gate insulating layer including silicon oxynitride, forming a gate electrode material layer on the nitride preliminary gate insulating layer, partially removing the nitrided preliminary gate insulating layer and the gate electrode material layer to respectively form a gate insulating layer and a gate electrode layer, and forming a gate capping layer on the gate electrode layer to fill the gate trenches.

Semiconductor devices having nitrided gate insulating layer and methods of fabricating the same

In methods of manufacturing a recessed channel array transistor, a recess may be formed in an active region of a substrate. A plasma oxidation process may be performed on the substrate to form a preliminary gate oxide layer on an inner surface of the recess and an upper surface of the substrate. Moistures may be absorbed in a surface of the preliminary gate oxide layer to form a gate oxide layer. A gate electrode may be formed on the gate oxide layer to fill up the recess. Source/drain regions may be formed in an upper surface of the substrate at both sides of the gate electrode. Thus, the oxide layer may have a uniform thickness distribution and a dense structure.

Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devices

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Yongin-si, South Korea

Jung-Sup Oh