Semes Co., Ltd.

Seoul National University

Jung Suk Goh

Kuk Saeng Kim

Ji Hoon Jeong

Pil Kyun Heo

Young Dae Chung

Cheng Bin Cui

Tae Shin Kim

Jee Young Lee

Won Geun Kim

Sun Mi Kim

Ye Rim Yeon

Ji Su Hong

Hyun Yoon

Do Yeon Kim

Kwang Sup Kim

Hyungmin Park

Young Je Um

Wan Hee Jeong

Do-Youn Lim

Yong Jun Seo

Do Youn Lim

Yoon Ki Sa

Byeong Geun Kim

Jae Seong Lee

A Rah Cho

Jubeom Lee

Linfeng Piao

Jungjin Lee

The present invention provides a liquid supplying unit, including: a nozzle; a liquid supply pipe configured to supply a treatment liquid to the nozzle; and an impurity removing unit installed in the liquid supply pipe to remove an impurity in the treatment liquid, in which the impurity removing unit includes: a measuring unit configured to measure a characteristic of the impurity in the treatment liquid and form impurity data; a vibrating unit configured to apply vibration to the treatment liquid; a capturing unit configured to adsorb the impurity in the treatment liquid to which the vibration is applied; and a control unit configured to control the measuring unit and the vibration unit, and when the impurity data exceeds a reference data range, the control unit operates the vibrating unit.

Liquid supplying unit and liquid supplying method

The inventive concept relates to an apparatus for treating a substrate. The apparatus includes a liquid supply unit that supplies a liquid to a substrate, a cover that is formed of a light transmitting material and installed on a component provided in the liquid supply unit and that provides an inspection area, and an inspection unit that inspects bubbles contained in the liquid flowing in the component provided in the inspection area. The inspection unit includes a light source that applies light toward the inspection area from outside the cover, a light receiving part that is located outside the cover and that receives the light passing through the inspection area, and an inspection part that inspects the bubbles from the light received by the light receiving part.

Bubble measurement unit, substrate treating apparatus including the same, and bubble measurement method

Disclosed is a substrate treatment apparatus. The apparatus includes a support unit that supports and rotates a substrate and a spray unit equipped with one or more nozzles to spray a dual fluid that is a mixture of a cleaning agent and carbon dioxide onto the substrate.

Surface treatment method

A substrate processing method and a substrate processing apparatus for removing material on a substrate are disclosed. In order to remove the material, a processing liquid including a chemical liquid and water is supplied on the substrate so that a liquid layer maintained by surface tension is formed. The material is removed from the substrate by a reaction between the material and the processing liquid. A size distribution of by-product particles formed by the reaction between the material and the processing liquid is measured by a dynamic light scattering method. A supply of the processing liquid is controlled based on the size distribution of the by-product particles.

Substrate processing control using a measured size distribution of by-product particles

Surface treatment apparatus and surface treatment method

A substrate treatment apparatus includes a substrate support unit, a chemical supply unit supplying a chemical solution onto an upper surface of a substrate supported on the substrate support unit, a laser irradiation unit applying a laser pulse to the substrate to heat the substrate, and a controller controlling the laser irradiation unit to emit the laser pulse such that the substrate is repeatedly heated and cooled to maintain a preset temperature.

Apparatus for and method of treating substrate

Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

Method and apparatus for etching thin layer

Growing community of inventors

Hwaseong-si, South Korea

Jung Suk Goh